Semiconductor Optoelectronics, Volume. 46, Issue 1, 10(2025)

A 1 920×1 080 Interline Transfer CCD Image Sensor with High Output Sensitivity

LI Jin1, YANG Hong1, SUN Chen1, XIONG Yuanyuan2, and TIAN Zhiwen2
Author Affiliations
  • 1Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2China Aerospace Standardization Research Institute, Beijing 100071, CHN
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    References(7)

    [1] [1] van de Steeg M J H, Peek H L, Bakker J G C, et al. A frame transfer CCD color imager with vertical anti-blooming[J]. IEEE Transactions on Electron Devices, 1985, 32(8): 1430-1438.

    [3] [3] Oda E, Ishihara Y, Teranishi N. Blooming suppression mechanism for an interline CCD image sensor with a vertical overflow drain[C]//International Electron Devices Meeting, 1983: 501-504.

    [5] [5] Akiyama I, Kohno A, Teranishi N. Noise characteristics of an interline CCD image sensor[C]//Proceedings of the Conference on Television Society, 1983: 57-58.

    [6] [6] Losee D L, Cassidy J C, Mehra M, et al. A 1/3 format image sensor with refractory metal light shield for color video applications[C]//IEEE International Solid-State Circuits Conference, 1989: 90-91.

    [8] [8] Haradaeta K, Negishi M, Ohgishi T, et al. A 2/3-inch 2 M pixel FIT-CCD HDTV image sensor[C]//IEEE International Solid-State Circuits Conference Digest of Technical Papers, 1992: 170-171.

    [9] [9] Hosack H H, Hynecek J. Clock controlled anti-blooming for virtual phase CCD's: 82300746.3[P]. 1982-02-15.

    [10] [10] Theuwissen A J P. Solid-State Imaging with CCDs[M]. Dordrecht: Kluwer Academic Publishers, 1995.

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    LI Jin, YANG Hong, SUN Chen, XIONG Yuanyuan, TIAN Zhiwen. A 1 920×1 080 Interline Transfer CCD Image Sensor with High Output Sensitivity[J]. Semiconductor Optoelectronics, 2025, 46(1): 10

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    Paper Information

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    Received: Dec. 15, 2024

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20241215001

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