In order to solve the problem of low charge conversion sensitivity and blooming under strong light irradiation of small pixel inter-line transfer charge-coupled device (ITCCD), the topology of inter-line transfer CCD device, pixel anti-blooming structure, on-chip readout circuit and process technology were studied, and a high-resolution interline transfer CCD image sensor was designed and developed, with an effective array size of 1 920×1 080 yuan and a pixel size of 7.4 μm× 7.4 μm. The test results show that the device breaks through the design and fabrication technology of 1.0 μm polysilicon gate length amplifier, and the charge conversion sensitivity of the device can reach 22.4 μV/e⁻, and the saturation voltage output is 1 300 mV. In order to realize the anti-blooming function, the device adopts the vertical anti-blooming structure of n-type buried channel-saddle p well-n-type substrate, and the anti-blooming ability of the device is 200 times, which can meet the requirements of high-sensitivity imaging of the device in complex lighting environments.