Fig. 1. (a) GaN materials with multiple quantum wells can realize the bi-directional conversion of optoelectronic/electro-optic signals; (b) layered structure of III-nitride materials with multiple quantum wells

Fig. 2. (a) Schematic diagram of III-nitride optoelectronic chip and its (b) schematic diagram of motion detection system

Fig. 3. Fabrication process of III-nitride optoelectronic chip

Fig. 4. Morphological images of optoelectronic chip. (a) Overall optical microscope image of optoelectronic chip; (b) optical microscope image of transmitting/receiving region; (c) SEM image of DBR layer; (d) enlarged optical microscope image of a single transmitter/receiver

Fig. 5. Electrical characteristics test results. (a) Current-voltage curve of transmitter/receiver; (b) capacitance-voltage curve of transmitter/receiver

Fig. 6. Electroluminescence (EL) spectrum of transmitter and spectral responsivity of receiver

Fig. 7. Luminescence photographs of transmitter with different injected currents

Fig. 8. Schematic diagram of motion detection system of optoelectronic chip

Fig. 9. Detected photocurrent of the receiver from the reflector moving at different rotating speeds when the transmitter is applied 2.9 V bias voltage

Fig. 10. Detected photocurrent of the receiver under 200 rpm, rotating speed of mirror when the bias voltages applied to the transmitter are set as 2.7 V, 2.8 V, 2.9 V

Fig. 11. (a) Variable speed motor and (b) photocurrent curve of variable speed motion detection

Fig. 12. (a) Visible light communication test system of optoelectronic chip as a transmitter. Signal waveforms (b) and eye diagram (c) of optoelectronic chip as a transmitter at 25 Mbps. (d) 3 dB bandwidth of optoelectronic chip as a transmitter at different bias voltages

Fig. 13. (a) Visible light communication test system of the optoelectronic chip as a transceiver. (b) Signal waveform and (c) eye diagram at 5 Kbps transmission rate