67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission

Daigao Chen; Hongguang Zhang; Min Liu; Xiao Hu; Yuguang Zhang; Dingyi Wu; Peiqi Zhou; Siyao Chang; Lei Wang; Xi Xiao

doi:10.1364/PRJ.455291

Photonics Research, Volume. 10, Issue 9, 2165(2022)

67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission

Daigao Chen^1,2、†, Hongguang Zhang^1、†, Min Liu¹, Xiao Hu^1,2, Yuguang Zhang^1,2, Dingyi Wu¹, Peiqi Zhou¹, Siyao Chang¹, Lei Wang^1,2,3, and Xi Xiao^1,2,3、*

Author Affiliations

¹National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China

²State Key Laboratory of Optical Communication Technologies and Networks, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China

³Peng Cheng Laboratory, Shenzhen 518055, China

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Figures & Tables(9)

Fig. 1. Schematic of the light-trapping-structure Ge PD: (a) 3D view, (b) top view, and (c) side view along the incident direction; (b) and (c) hide all metal layers. Doping is not shown.

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Fig. 2. Field distributions at different wavelengths in the proposed PD. (a)–(d) Distributions in silicon layer and (e)–(h) distributions in germanium layer.

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Fig. 3. Calculated responsivity of the circular Ge PD.

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Fig. 4. Optical micrograph of the fabricated circular Ge PD.

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Fig. 5. (a) Dark current versus voltage and (b) normalized responsivity at different wavelengths.

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Fig. 6. Normalized frequency response of the proposed Ge PD.

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Fig. 7. (a) Experiment setup of high-speed PAM-4 signal transmission system and (b) BTB eye diagram of 80, 90, 100, and 105 GBaud PAM-4 signals.

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Fig. 8. (a) BER versus different bit rates with BTB, 1 km, and 2 km transmissions; (b) BTB BER of 200 Gb/s PAM-4 versus different optical power.

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Table 1. Performance Comparison between Proposed PD and Other Works

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Table 1. Performance Comparison between Proposed PD and Other Works

Reference		Structure of Ge	3 dB Bandwidth (GHz)	Responsivity (A/W)	Dark Current (nA)	Dark Current Density ( $mA / {cm}^{2}$ )
[9]		Rectangle ( $0.1 \times 10 {μm}^{2}$ )	265 at 2 V	0.3 at 1550 nm	$\leq 200$ at 2 V	$\leq 5000$ ^a
[10]		Rectangle ( $0.5 \times 14.2 {μm}^{2}$ )	67 at 1 V	0.74 at 1550 nm $\sim 0.52$ at 1570 nm	3.6 at 2 V	$\sim 158$ ^a
[24]		Rectangle	67 at 2 V	0.9 at 1550 nm	–	90 at 1 V
[25]	Rectangle ( $3 \times 15 {μm}^{2}$ )		42 at 4 V	1 at 1550 nm $\sim 0.58$ at 1580 nm (with edge coupler)	18 at 1 V	60
[26]		Rectangle ( $7.4 \times 50 {μm}^{2}$ )	31 at 2 V	0.89 at 1550 nm $\sim 0.82$ at 1580 nm	169 at 2 V	51
[29]		Rectangle ( $1.5 \times 12 {μm}^{2}$ )	40 at 1 V	0.7 at 1550 nm $\sim 0.5$ at 1580 nm	1.16 at 1 V	$\sim 6$ ^a
[30]		Rectangle ( $1.3 \times 4 {μm}^{2}$ )	45 at 1 V	0.8 at 1500 nm (TM mode)	3 at 1 V	$\sim 57$ ^a
Our previous work		Rectangle ( $4 \times 20 {μm}^{2}$ )	35 at 3 V	0.85 at 1550 nm	20 at 2 V	25
This work		Circular ( $9 \times π {μm}^{2}$ )	67 at 2 V	1.05 at 1550 nm 0.78 at 1580 nm	6.4 at 2 V	23

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Daigao Chen, Hongguang Zhang, Min Liu, Xiao Hu, Yuguang Zhang, Dingyi Wu, Peiqi Zhou, Siyao Chang, Lei Wang, Xi Xiao, "67 GHz light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission," Photonics Res. 10, 2165 (2022)

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Paper Information

Category: Silicon Photonics

Received: Feb. 4, 2022

Accepted: Jun. 16, 2022

Published Online: Aug. 29, 2022

The Author Email: Xi Xiao (xxiao@wri.com.cn)

DOI:10.1364/PRJ.455291

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology