Journal of Infrared and Millimeter Waves, Volume. 41, Issue 6, 1030(2022)

Design of high-frequency circuit for W-band CW sheet beam extended-interaction klystron

Qi JIN1,2, Zhi-Hui GENG1、*, Jian ZHANG1,2, Rui ZHANG1, Xiu-Dong YANG1, Yun-Feng LIAO1, and Shou-Xi XU1
Author Affiliations
  • 1Key Laboratory of Science and Technology on High Power Microwave Sources and Technologies,Aerospace Information Research Institute,Chinese Academy of Sciences,Beijing 100190,China
  • 2School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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    To solve the problem that W-band klystron is difficult to achieve CW (continuous wave) high power, we propose a W-band CW sheet beam extended-interaction klystron (EIK) high frequency circuit operating at TM31-2π mode. A sheet electron beam with a voltage of 20 kV, a current of 0.65 A and the dimension of 2.5 mm×0.3 mm is used. The high frequency system adopts five dumbbell type five-gap cavities and the output system adopts symmetrical output waveguide. By optimizing high-frequency structural parameters, the simulation results of 3D PIC show that more than 1200 W power can be obtained at an input power of 0.2 W, and the electron efficiency and gain are 9.35% and 37.8 dB respectively. In terms of sensitivity and error stability of high-frequency parameters, TM31 mode and TM11 mode are compared and analyzed in detail.

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    Qi JIN, Zhi-Hui GENG, Jian ZHANG, Rui ZHANG, Xiu-Dong YANG, Yun-Feng LIAO, Shou-Xi XU. Design of high-frequency circuit for W-band CW sheet beam extended-interaction klystron[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 1030

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    Paper Information

    Category: Research Articles

    Received: Apr. 22, 2022

    Accepted: --

    Published Online: Feb. 6, 2023

    The Author Email: Zhi-Hui GENG (zh.geng@163.com)

    DOI:10.11972/j.issn.1001-9014.2022.06.012

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