Effect of Material and Structure of Quantum Well Gradient Layer on Performance of GaN-Based LED

Jinjun Wang; Yanying Yang; Binhui Bai; Chenyu Xu

doi:10.3788/AOS221395

Acta Optica Sinica, Volume. 43, Issue 4, 0416002(2023)

Effect of Material and Structure of Quantum Well Gradient Layer on Performance of GaN-Based LED

Jinjun Wang^*, Yanying Yang, Binhui Bai, and Chenyu Xu

School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, Shaanxi, China

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Figures & Tables(17)

Fig. 1. Diagram of GaN-based LED structure

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Fig. 2. Different polarization charge densities of In components

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Fig. 3. Distribution of internal carrier concentration of different In components

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Fig. 4. Power spectral density for different In components

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Fig. 5. Diagram of polarization charge density for different In component at top layer of gradient layer

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Fig. 6. Distribution of internal carrier concentration for different In component at top layer of gradient layer

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Fig. 7. Power spectral density for different In component at top layer of gradient layer

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Fig. 8. Polarization charge density for different thickness of top layer of gradient layer

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Fig. 9. Distribution of internal carrier concentration for different thickness of top layer of gradient layer

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Fig. 10. Power spectral density for different thickness of top layer of graded layer

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Fig. 11. Polarization charge density for different single layer thickness of non top layer of gradient layer

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Fig. 12. Internal carrier distribution for different single layer structure of non top layer of gradient layer

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Fig. 13. Power spectral density for different thickness of non top layer of gradient layer

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Table 1. Model parameters for uniform increase of In component x
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Table 1. Model parameters for uniform increase of In component x
Model In component x
S_ub1 S_ub2 S_ub3 S_ub4 S_ub5
1 0.02 0.04 0.06 0.08 0.10
2 0.03 0.06 0.09 0.12 0.15
3 0.04 0.08 0.12 0.16 0.20
4 0.05 0.10 0.15 0.20 0.25
5 0.06 0.12 0.18 0.24 0.30
6
7
0.07
0.38
0.14
0.38
0.21
0.38
0.28
0.38
0.35
0.38

Table 2. Model parameters of In component x at top layer of gradient layer
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Table 2. Model parameters of In component x at top layer of gradient layer
Model In component x
S_ub1 S_ub2 S_ub3 S_ub4 S_ub5
8 0.05 0.10 0.15 0.20 0.23
9 0.05 0.10 0.15 0.20 0.25
10 0.05 0.10 0.15 0.20 0.27
11 0.05 0.10 0.15 0.20 0.29

Table 3. Model parameters for increasing thickness of top layer of gradient layer
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Table 3. Model parameters for increasing thickness of top layer of gradient layer
Model H₁ H₂ H₃ H₄ H₅
12 1 1 1 1 2
13 1 1 1 1 3
14 1 1 1 1 4
15 1 1 1 1 5

Table 4. Model parameters for changing thickness of non top layer of gradient layer
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Table 4. Model parameters for changing thickness of non top layer of gradient layer
Model H₁ H₂ H₃ H₄ H₅
16 1 1 1 1 3
17 1 1 1 2 3
18
19
20
1
1
1
1
1
1
1
2
3
3
1
1
3
3
3

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Jinjun Wang, Yanying Yang, Binhui Bai, Chenyu Xu. Effect of Material and Structure of Quantum Well Gradient Layer on Performance of GaN-Based LED[J]. Acta Optica Sinica, 2023, 43(4): 0416002

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Paper Information

Category: Materials

Received: Jun. 29, 2022

Accepted: Sep. 22, 2022

Published Online: Feb. 16, 2023

The Author Email: Wang Jinjun (wangjinjun@sust.edu.cn)

DOI:10.3788/AOS221395

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Model parameters for uniform increase of In component x

Table 1. Model parameters for uniform increase of In component x

Table 2. Model parameters of In component x at top layer of gradient layer

Table 2. Model parameters of In component x at top layer of gradient layer

Table 3. Model parameters for increasing thickness of top layer of gradient layer

Table 3. Model parameters for increasing thickness of top layer of gradient layer

Table 4. Model parameters for changing thickness of non top layer of gradient layer

Table 4. Model parameters for changing thickness of non top layer of gradient layer