High Power Laser and Particle Beams, Volume. 36, Issue 11, 115006(2024)

Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics

Yingxiang Yang1, Xianghong Yang1、*, Zhangjie Zhu2, Jia Huang2, Xin Li1, and Long Hu1、*
Author Affiliations
  • 1School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
  • 2School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
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    Figures & Tables(5)
    Fabrication procedures and physical picture of a GaAs photoconductive semiconductor switch
    Schematic diagram of the test circuit for GaAs photoconductive semiconductor switches
    Electrical characteristics of GaAs photoconductive semiconductor switches under different bias electric fields
    Lifetime testing of GaAs photoconductive semiconductor switches
    Physical picture of GaAs photoconductive semiconductor switch failure device
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    Yingxiang Yang, Xianghong Yang, Zhangjie Zhu, Jia Huang, Xin Li, Long Hu. Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics[J]. High Power Laser and Particle Beams, 2024, 36(11): 115006

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    Paper Information

    Category: Photoconductive Switches

    Received: Jun. 14, 2024

    Accepted: Jul. 8, 2024

    Published Online: Jan. 8, 2025

    The Author Email: Xianghong Yang (xh.yang@nxu.edu.cn), Long Hu (hulong@xjtu.edu.cn)

    DOI:10.11884/HPLPB202436.240161

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