High Power Laser and Particle Beams, Volume. 36, Issue 11, 115006(2024)
Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics
Fig. 1. Fabrication procedures and physical picture of a GaAs photoconductive semiconductor switch
Fig. 2. Schematic diagram of the test circuit for GaAs photoconductive semiconductor switches
Fig. 3. Electrical characteristics of GaAs photoconductive semiconductor switches under different bias electric fields
Fig. 4. Lifetime testing of GaAs photoconductive semiconductor switches
Fig. 5. Physical picture of GaAs photoconductive semiconductor switch failure device
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Yingxiang Yang, Xianghong Yang, Zhangjie Zhu, Jia Huang, Xin Li, Long Hu. Fabrication of avalanche GaAs photoconductive switch with opposed-electrode structure and its switching characteristics[J]. High Power Laser and Particle Beams, 2024, 36(11): 115006
Category: Photoconductive Switches
Received: Jun. 14, 2024
Accepted: Jul. 8, 2024
Published Online: Jan. 8, 2025
The Author Email: Xianghong Yang (xh.yang@nxu.edu.cn), Long Hu (hulong@xjtu.edu.cn)