NUCLEAR TECHNIQUES, Volume. 46, Issue 2, 020203(2023)
Proton irradiation damage in silicon carbide junction barrier Schottky diode
Figures & Tables(12)
Fig. 2. Forward electrical characteristics (a) and reverse electrical properties (b) of SiC JBSs before irradiation
Fig. 3. Forward I-V characteristic curves of left chip (a) and right chip (b) of SiC JBSs before and after proton irradiation
Fig. 4. Comparison of ideal factor n of SiC JBS before and after irradiation
Fig. 5. Reverse I-V characteristic curves of left chip (a) and right chip (b) of SiC JBSs before and after proton irradiation
Fig. 6. Reverse I-V characteristic curves of left chip (a) and right chip (b) of SiC JBSs after room temperature annealing
Fig. 7. C-V characteristic curves of left chip (a) and right chip (b) of SiC JBSs before and after proton irradiation
Fig. 8. The curve of 1/C2-V of left chip (a) and right chip (b) of SiC JBSs before and after proton irradiation
Fig. 9. Comparison of DLTS test results of SiC JBS before and after irradiation
Table 1. The experimental parameters of proton irradiation
View tableView in ArticleTable 1. The experimental parameters of proton irradiation
能量
Energy / MeV
编号
Number
注量率
Fluence rate / p·cm-2·s-1
总注量
Fluence / p·cm-2
10 1# 3×106 3×109 2# 3×107 3×1010
Table 2. The data from the curve of 1/C2-V of SiC JBS before and after irradiation
View tableView in ArticleTable 2. The data from the curve of 1/C2-V of SiC JBS before and after irradiation
编号
Number
斜率
Slope / pF-2·V-1
X轴截距
X-axis intercept
芯片 Chip L R L R 辐照前Before irradiation -2.16×1017 -2.17×1017 0.96 0.95 1# -2.22×1017 -2.51×1017 0.97 1.21 2# -2.34×1017 -2.55×1017 1.08 1.29
Table 3. The Key performance parameters of SiC JBS before and after irradiation
View tableView in ArticleTable 3. The Key performance parameters of SiC JBS before and after irradiation
编号Number 肖特基势垒高度
Schottky Barrier Height
/ V 有效载流子浓度
Effective carrier concentration
Neff / cm-3
L R L R 辐照前
Before Irradiation
1.03 1.02 2.33×1016 2.32×1016 1# 1.04 1.38 2.27×1016 2.00×1016 2# 1.05 1.46 2.15×1016 1.97×1016
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Cuicui LIU, Zhiming LI, Jinhua HAN, Gang GUO, Qian YIN, Yanwen ZHANG, Jiancheng LIU. Proton irradiation damage in silicon carbide junction barrier Schottky diode[J]. NUCLEAR TECHNIQUES, 2023, 46(2): 020203
Paper Information
Category: Research Articles
Received: Jun. 25, 2022
Accepted: --
Published Online: Mar. 2, 2023
The Author Email: GUO Gang (ggg@ciae.ac.cn)
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