Design of millimeter-wave detectors based on zero-bias Schottky diode for direct detection system of CubeSat radiometer

Yao CHEN; Sheng-Wei ZHANG

doi:10.11972/j.issn.1001-9014.2022.01.023

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 1, 2021017(2022)

Design of millimeter-wave detectors based on zero-bias Schottky diode for direct detection system of CubeSat radiometer

Yao CHEN^1,2 and Sheng-Wei ZHANG^1、*

¹Key Laboratory of Microwave Remote Sensing，National Space Science Center，Chinese Academy of Sciences，Beijing 100190，China

²University of Chinese Academy of Sciences，Beijing 100049，China

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Fig. 1. (a) Typical zero-bias detector circuit structure，(b) improved zero-bias detector structure

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Fig. 2. (a) Structure of the QVSD and its 3D electromagnetic model in HFSS, (b) equivalent circuits of the QVSD and diode junction area

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Fig. 3. (a) Short-circuit structure of the QVSD and its port loading model in HFSS (b) equivalent circuit

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Fig. 4. Simulated and measured I-V characteristic: (a) 3DSF20 (b)3DSF30

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Fig. 5. Transition models and simulated S-parameters: (a) W-band (b) D-band

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Fig. 6. Radial stub structure models and Smith chart simulation results: (a) W-band, (b) D-band

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Fig. 7. Integrated circuit structure

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Fig. 8. Integrated circuit models in HFSS: (a) W-band (b) D-band

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Fig. 9. Photos of two detector modules and their circuits: (a) W-band (b) D-band

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Fig. 10. Photo of return loss test platform

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Fig. 11. Simulated, measured, and fixed return loss: (a) W-band detector (b) D-band detector

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Fig. 12. Test platform

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Fig. 13. Simulated and measured voltage sensitivity: (a) W-band detector (b) D-band detector

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Fig. 14. Measured linearity: (a) W-band detector, (b) D-band detector

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Table 1. 3D electromagnetic model parameters of the QVSD
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Table 1. 3D electromagnetic model parameters of the QVSD
Layer Material Relative Dielectric Constant Thickness（µm）
Epitaxial Layer GaAs 12.9 0.2
Buffer Layer Perfect Conductor 1 1.8
Thin Film Substrate GaAs 12.9 5
Passivation Layer SiO₂ 4 0.5
Anode Probe & Pad Gold 1 —

Table 2. Calculated $R_{s}$ , $I_{s}$ , and $n$ of Schottky diodes
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Table 2. Calculated $R_{s}$ , $I_{s}$ , and $n$ of Schottky diodes
Type $R_{s}$ （Ω） $I_{s}$ （mA） $n$
3DSF20 14.585 0.051 1.052
3DSF30 10.672 0.02 1.059

Table 3. Calculated parameters of $L_{1}$ and $L_{2}$ and optimized normalized impedances of port 1
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Table 3. Calculated parameters of $L_{1}$ and $L_{2}$ and optimized normalized impedances of port 1
$Z_{L_{1}}$ （Ω） $θ_{L_{1}}$ （deg） $Z_{L_{2}}$ （Ω） $θ_{L_{2}}$ （deg） Port 1 Impedance
W-band 57.24 11.03 117.89 64.73 0.611-j2.035
D-band 144.21 97.47 120.79 24.11 1.95+j1.552

Table 4. Original and fixed parameters of $C_{j}$ and $R_{s}$ of the Schottky diodes
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Table 4. Original and fixed parameters of $C_{j}$ and $R_{s}$ of the Schottky diodes
Type Parameters Original value Fixed value Error range provided by ACST
3DSF20 $C_{j}$ （fF） 20 21.273 16 to 24
$R_{s}$ （Ω） 14.585 10.489 —
3DSF30 $C_{j}$ （fF） 30 24.627 24 to 36
$R_{s}$ （Ω） 10.725 18.986 5 to 20

Table 5. Voltage sensitivity comparison

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Table 5. Voltage sensitivity comparison

Ref.	W-band Frequency/GHz	Voltage Sensitivity（V/ W）	D-band Frequency/GHz	Voltage Sensitivity（V/ W）
［5］	79~93	>860	—	—
［6］	85~110	Typ 750，MAX 1000	—	—
［8］	86~94	>2000	—	—
［9］	80~104	>2000	120~155	Typ 600，MAX 1600
This work	85~95	Typ 2500，MAX 2875	145~155	Typ 1600，MAX 1891

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Yao CHEN, Sheng-Wei ZHANG. Design of millimeter-wave detectors based on zero-bias Schottky diode for direct detection system of CubeSat radiometer[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021017

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Paper Information

Category: Research Articles

Received: Jan. 18, 2021

Accepted: --

Published Online: Apr. 18, 2022

The Author Email: Sheng-Wei ZHANG (zhangshengwei@mirslab.cn)

DOI:10.11972/j.issn.1001-9014.2022.01.023

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. 3D electromagnetic model parameters of the QVSD

Table 1. 3D electromagnetic model parameters of the QVSD

Table 2. Calculated Rs, Is, and n of Schottky diodes

Table 2. Calculated Rs, Is, and n of Schottky diodes

Table 3. Calculated parameters of L1 and L2 and optimized normalized impedances of port 1

Table 3. Calculated parameters of L1 and L2 and optimized normalized impedances of port 1

Table 4. Original and fixed parameters of Cj and Rs of the Schottky diodes

Table 4. Original and fixed parameters of Cj and Rs of the Schottky diodes

Table 5. Voltage sensitivity comparison

Table 5. Voltage sensitivity comparison

Table 2. Calculated $R_{s}$ , $I_{s}$ , and $n$ of Schottky diodes

Table 2. Calculated $R_{s}$ , $I_{s}$ , and $n$ of Schottky diodes

Table 3. Calculated parameters of $L_{1}$ and $L_{2}$ and optimized normalized impedances of port 1

Table 3. Calculated parameters of $L_{1}$ and $L_{2}$ and optimized normalized impedances of port 1

Table 4. Original and fixed parameters of $C_{j}$ and $R_{s}$ of the Schottky diodes

Table 4. Original and fixed parameters of $C_{j}$ and $R_{s}$ of the Schottky diodes