Journal of Synthetic Crystals, Volume. 54, Issue 6, 970(2025)
Sidewall Repair Improves Optical Power Density of 237 nm AlGaN-Based Micro-LEDs
Fig. 1. (a) Schematic diagram of the epitaxial layer structure; (b)~(d) schematic diagrams of Micro-LED structures; (e) optical microscope image of Micro-LED; (f) electroluminescence (EL) spectra of the epitaxial layers
Fig. 2. Current density-voltage characteristic curves of S1, S2, S3 before (a) and after (b) the sidewall repair; optical power density-current density characteristic curves of S1, S2, S3 before (c) and after (d) the sidewall repair
Fig. 3. Simulation results of Micro-LEDs of different sizes (without considering sidewall effects). (a) Current density-voltage characteristic curves; (b) optical power density-current density characteristic curves; (c) relationship curves between IQE and current density; (d) lateral distribution of carrier concentration in the quantum wells (the small inset in the figure is a schematic diagram of the data extraction position)
Fig. 4. Schematic diagram of the device current path. (a) Single mesa; (b) arrayed mesa
Fig. 5. Current density-voltage characteristic curves of S3, S4, S5 before (a) and after (b) sidewall repair; optical power density-current density characteristic curves of S3, S4, S5 before (c) and after (d) sidewall repair
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Jialong HAO, Hongbo LI, Shunpeng LYU, Licai ZHU, Wenchao SUN, Ruojia ZHANG, Zhongxu LIU, Ke JIANG, Jianwei BEN, Shanli ZHANG, Xiaojuan SUN, Dabing LI. Sidewall Repair Improves Optical Power Density of 237 nm AlGaN-Based Micro-LEDs[J]. Journal of Synthetic Crystals, 2025, 54(6): 970
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Received: Nov. 4, 2024
Accepted: --
Published Online: Jul. 8, 2025
The Author Email: Shunpeng LYU (lvshunpeng@ciomp.ac.cn), Shanli ZHANG (zhangshanli@ciomp.ac.cn)