Dependency of photoluminescence from SiO&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; thin f ilms containing Si&amp;lt;sub&amp;gt;1-x&amp;lt;/sub&amp;gt;Ge&amp;lt;sub&amp;gt;x&amp;lt;/sub&amp;gt; quantum dots on Ge/Si doping ratio

Kun Zhong; Zhisong Xiao; Guo’an Cheng; Xiangqian Cheng; Ruiting Zheng

doi:10.3788/COL20090709.0826

Chinese Optics Letters, Volume. 7, Issue 9, 826(2009)

Dependency of photoluminescence from SiO2 thin f ilms containing Si1-xGex quantum dots on Ge/Si doping ratio

Kun Zhong¹, Zhisong Xiao², Guo’an Cheng¹, Xiangqian Cheng¹, and Ruiting Zheng¹

Author Affiliations

¹Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China

²Department of Physics, School of Science, Beihang University, Beijing 100191, China

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Kun Zhong, Zhisong Xiao, Guo’an Cheng, Xiangqian Cheng, Ruiting Zheng, "Dependency of photoluminescence from SiO2 thin f ilms containing Si1-xGex quantum dots on Ge/Si doping ratio," Chin. Opt. Lett. 7, 826 (2009)

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Paper Information

Received: Dec. 15, 2008

Accepted: --

Published Online: Sep. 22, 2009

The Author Email:

DOI:10.3788/COL20090709.0826

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology