Laser & Optoelectronics Progress, Volume. 58, Issue 14, 1431001(2021)

Development of a 945-nm Narrowband Filter Based on a Structured Light 3D Imaging Technology

Boyang Wei1、*, Dongmei Liu1, Xiuhua Fu1, Jing Zhang1, Shuang Li2, and Bin Zhou2
Author Affiliations
  • 1College of Photoelectric Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2Optorun (Shanghai) Co., Ltd., Shanghai 200444, China
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    Figures & Tables(16)
    Schematic of structured light 3D imaging
    Refractive index n and extinction coefficient k of Si-H and SiO2. (a) Refractive index; (b) extinction coefficient
    Theoretical spectral design curves of the front surface
    Design curves of reflection spectra of rear surface
    Theoretical curves of double-sided transmission
    Flow chart of thin film preparation
    Spectral test curves
    Measuring results of filter fabricated by reactive sputtering. (a)AFM image; (b)SEM image
    Surface roughness of Si-H fabricated by two sputtering methods. (a) Reactive sputtering; (b) DC magnetron sputtering
    Voltage fluctuation diagram of target material
    Working principle of auxiliary anode
    Measuring results of filter fabricated by inductively coupled and DC sputtering. (a)AFM image; (b)SEM image
    Spectral test curves
    • Table 1. Designed spectral parameters of filter

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      Table 1. Designed spectral parameters of filter

      ItemContentSpecification
      Incident angle 0°Bandwidth@T50%≤42 nm
      Bandwidth@T10%≤48.5 nm
      Tavg@934.2--961.8 nm≥98.5%
      Tabs@934.2--961.8 nm≥90%
      Incident angle 38°Bandwidth@T50%≤42 nm
      Bandwidth@T10%≤50 nm
      Tavg@925.6--951 nm≥98.5%
      Tabs@925.6--951 nm≥90%
      AOI shiftΔCW@0°--38°≤13 nm
    • Table 2. Technological parameters of single layer Si-H and SiO2

      View table

      Table 2. Technological parameters of single layer Si-H and SiO2

      MaterialTG2-SiTG3-SiTG4-SiICP×2
      Power /kWAr flow /(mL·min-1)Power /kWAr flow /(mL·min-1)Power /kWAr flow /(mL·min-1)Power /kWAr flow /(mL·min-1)O2 flow /(mL·min-1)H2 flow /(mL·min-1)
      Si-H8100810081003×2100020
      SiO28100810081003×2501200
    • Table 3. Process parameters

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      Table 3. Process parameters

      MaterialTG1/2/3-SiICP1/2
      Power /kWAr flow /(mL·min-1)O2 flow /(mL·min-1)H2 flow /(mL·min-1)Power /kWAr flow /(mL·min-1)O2 flow /(mL·min-1)H2 flow /(mL·min-1)
      Si-H81000350000
      SiO281001200310000
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    Boyang Wei, Dongmei Liu, Xiuhua Fu, Jing Zhang, Shuang Li, Bin Zhou. Development of a 945-nm Narrowband Filter Based on a Structured Light 3D Imaging Technology[J]. Laser & Optoelectronics Progress, 2021, 58(14): 1431001

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    Paper Information

    Category: Thin Films

    Received: Oct. 16, 2020

    Accepted: Nov. 14, 2020

    Published Online: Jul. 14, 2021

    The Author Email: Boyang Wei (2824155502@qq.com)

    DOI:10.3788/LOP202158.1431001

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