Traditional low-voltage triggered silicon controlled rectifier(LVTSCR)has low holding voltage, which may lead to latch-up risk when applied to ESD protection on chip. In this paper, an embedded shunt path LVTSCR was proposed. Based on a 0.18 μm CMOS technology, Sentaurus-TCAD software was used to simulate the human body model, and the quasi-static characteristics of the device were analyzed. The results showed that the novel device could effectively improve the holding voltage while maintaining the trigger voltage and ESD protection. By optimizing the key dimension D6, the device’s holding voltage was increased to more than 5.5 V, which could be safely applied to 5 V operating voltage circui,t and the latch-up effects were avoided.