Chinese Journal of Lasers, Volume. 31, Issue 1, 22(2004)

High Duty-cycle High Power Semiconductor Laser Array

[in Chinese]1、*, [in Chinese]2, [in Chinese]1, [in Chinese]2, and [in Chinese]3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(4)

    [1] [1] John G. Endriz, Mitral Vakili, Gerald S. Brower et al.. High power diode laser arrays [J]. IEEE J. Quantum Electron., 1992, 28(4):952~965

    [2] [2] X. He, A. Ovtchinnikov, S. Yang et al.. Efficient high power reliable InGaAs/AlGaAs (940 nm) monolithic laser diode arrays [J]. Electron. Lett., 1999, 35(20):1739~1740

    [3] [3] Robert V. Steele. Review and forecast of the laser markets part Ⅱ: diode lasers [J]. Laser Focus World, 2002, 38(2):61~72

    [4] [4] M. Sakamoto, J. G. Endriz, D. R. Scifres. 120 W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted on diamond heatsink [J]. Electron. Lett., 1992, 28(2):197~199

    CLP Journals

    [1] Hu Liming, Li Zaijin, Qin Li, Yang Ye, Wang Ye, Liu Yun, Wang Bingbing, Wang Lijun. Characteristics of High Power Al-Free Quantum-Well Laser Diode Array[J]. Chinese Journal of Lasers, 2010, 37(2): 379

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Duty-cycle High Power Semiconductor Laser Array[J]. Chinese Journal of Lasers, 2004, 31(1): 22

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 12, 2002

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (ysyz001@sina.com)

    DOI:

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