The metal oxide thin film transistor (MOTFT) has the advantages of high carrier mobility (10~100 cm2/V·s), good thin film uniformity, low preparation temperature and transparent visible light. It is the most promising new generation TFT. Laser annealing has the characteristics of high energy, short time, low damage to the substrate and controllable processing range. According to the traditional thermal continuous, it is more suitable to produce flexible and large-size panels. The research progress of laser annealing discusses in detail the key parameters that affect the inversion effect in laser annealing; the effect of laser on metal oxide thin film and the effect of laser on the performance of MOTFT are systematically decomposed. Finally, the problems and development directions of current laser annealing technology are summarized.