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Chinese Journal of Lasers, Volume. 25, Issue 4, 369(1998)

Epitaxial Matching Orientations of GaN with Bare and Nitridated Al2O3(0001) Substrates

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Epitaxial Matching Orientations of GaN with Bare and Nitridated Al2O3(0001) Substrates[J]. Chinese Journal of Lasers, 1998, 25(4): 369

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    Paper Information

    Category: materials and thin films

    Received: Aug. 26, 1997

    Accepted: --

    Published Online: Oct. 18, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology