Acta Optica Sinica, Volume. 44, Issue 17, 1732023(2024)
Effects of Femtosecond Laser Ablation on Optoelectronic Properties of Gallium Arsenide in Different Environments (Invited)
Fig. 1. Experimental setup for femtosecond laser processing of micro/nano structures on material surfaces
Fig. 3. SEM images magnified 2k times of processed samples in four different gas environments. (a) Air; (b) vacuum; (c) nitrogen; (d) sulfur hexafluoride. (e)-(f) indicate SEM images magnified 5k times of rectangular box areas in (a)-(d) respectively
Fig. 4. SEM images magnified 2k times of prosessed samples tilted 45° in four different gas environments. (a) Air; (b) vacuum; (c) nitrogen; (d) sulfur hexafluoride. (e)-(f) indicate SEM images magnified 5k times of rectangular box areas in (a)-(d) respectively
Fig. 5. XPS test analysis of prosessed sample surface in different gas environments
Fig. 6. Comparison of reflectance and transmittance in near-infrared range between original wafer and processed sample. (a) Reflectance; (b) transmittance
Fig. 7. Schematic diagram of light absorption for micro/nano structures of sample
Fig. 9. I-V curves of sample under dark state and 50 mW light illumination conditions. (a) Under dark state; (b) under 50 mW light illumination
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Yang Li, Yanrong Xiang, Zhiqiang Lan, Zuanming Jin, Yiming Zhu. Effects of Femtosecond Laser Ablation on Optoelectronic Properties of Gallium Arsenide in Different Environments (Invited)[J]. Acta Optica Sinica, 2024, 44(17): 1732023
Category: Ultrafast Optics
Received: Jan. 24, 2024
Accepted: Mar. 12, 2024
Published Online: Sep. 11, 2024
The Author Email: Zhu Yiming (ymzhu@usst.edu.cn)