Journal of Infrared and Millimeter Waves, Volume. 41, Issue 6, 941(2022)
The magic of III-Vs
Figures & Tables(15)
Fig. 1. Geometrical schematic of the ternary and quaternary combinations composed of binary arsenide AlAs，GaAs and InAs，as well as phosphide AlP，GaP and InP，the lattice matched domain to different substrate was also shown. The bandgap and lattice constant of the binaries was marked，shadow area represents indirect bandgap zone
Fig. 2. Schematic of two typical quaternary alloys (a) quasi-ternary AlzGaxInyAs, (b) quasi-quaternary In1-xGaxAsyP1-y. The solid (blue) and dashed (gray) line show their direct bandgap and lattice constant contour respectively, shadow area is indirect bandgap. The composition lines lattice matched to InP or GaAs substrates are also shown
Fig. 3. Geometrical schematic of the quinary AlGaInAsP. The lattice matched domain to different substrate was shown，the bandgap and lattice constant of the binaries was also marked
Fig. 4. Geometric schematic of the ternary and quaternary combinations composed of binary antimonide AlSb，GaSb and InSb，as well as arsenide AlAs，GaAs and InAs，the lattice matched domain to different substrate was also shown. The bandgap and lattice constant of the binaries was marked，shadow area represents indirect bandgap zone
Fig. 5. Geometric schematic of the quinary AlGaInAsSb. The lattice matched domain to different substrate was shown，the bandgap and lattice constant of the binaries was also marked
Fig. 6. Geometric schematic of the ternary and quaternary combinations composed of binary antimonide AlSb，GaSb and InSb，as well as phosphide AlP，GaP and InP，the lattice matched domain to different substrate was also shown. The bandgap and lattice constant of the binaries was marked，shadow area represents indirect bandgap zone
Fig. 7. Geometric schematic of the quinary AlGaInPSb. The lattice matched domain to different substrate was shown，the bandgap and lattice constant of the binaries was also marked
Fig. 8. Geometric schematic of some ternary and quaternary combinations composed of binary antimonide AlSb，GaSb and InSb with both arsenide and phosphide，the lattice matched domain to different substrate was also shown. The bandgap and lattice constant of the binaries was marked，shadow area represents indirect bandgap zone
Fig. 9. Schematic of quaternary alloys of quasi-ternary InAszPySbx. The solid（blue）and dashed（gray）line show bandgap and lattice constant contour respectively. The composition lines lattice matched to InAs or GaSb substrates are also shown
Fig. 10. Geometric schematic of the quinary GaInAsPSb. The lattice matched domain to different substrate was shown，the bandgap and lattice constant of the binaries was also marked
Fig. 11. Geometric schematic of quaternary AlGaInN and ternaries AlGaN，InGaN，InAlN composed of binary nitride AlN，GaN and InN of wurtzite structure（hexagonal crystal system）. The bandgap and lattice constant of the binaries was marked，some substrates for this nitride system were also noted
Fig. 12. Bandgap contour of the quaternary InGaAsBi at dilute bismide area with Bi content less than 10%，in which the lattice matching line and ~1.3% positive mismatching line to the InP substrate were also plotted
Table 1. Summary of constituent and geometrical presentations of the III-V compound semiconductors
View tableView in ArticleTable 1. Summary of constituent and geometrical presentations of the III-V compound semiconductors
Compounds Element numbers Constituent Geometrical presentations Binary 2 elements 1 binary Corner point（0D） Ternary 3 elements 2 binaries Edge line（1D） Quaternary 4 elements 3 binaries/quasi-ternary
4 binaries/quasi-quaternary
Regula triangle（2D）
Square（2D）
Quinary 5 elements 6 binaries/quasi-hexahydric Regular triangle prism（3D）
Table 2. Main applications of III-V compound semiconductors in three categories of electronics, optoelectronics and photonics
View tableView in ArticleTable 2. Main applications of III-V compound semiconductors in three categories of electronics, optoelectronics and photonics
Electronics Optoelectronics Photonics Transferred electron microwave sources（Gunn，IMPATT，BARRITT，…） Photodetector and FPA（PIN，APD，QWIP，T2SL，…） Waveguide，Coupler，Divider，Isolator，… Mixer，Hall，… Photocathode Filter High power，high temperature devices Solar cell，thermal cell Modulator（Amplitude，Phase） Heterojunction bipolar transistor（HBT） Light emitting diode Multiplexer High electron mobility transistor（HEMT），Pseudomorphic HEMT，… Lasers（FP，DFB，VCSEL，QCL，ICL，…） Semiconductor optical amplifier（SOA），Wavelength convertor，… Monolithic microwave integrated circuit
（MMIC）
Optoelectronic integrated circuit
（OEIC）
Photonic integrated circuit
（PIC）
…… …… …，，，
Table 3. The earth's crust abundance, density and melting points of some elements related to group IV, III-V and II-VI semiconductors, the noble metal silver and gold were also listed for comparison
View tableView in ArticleTable 3. The earth's crust abundance, density and melting points of some elements related to group IV, III-V and II-VI semiconductors, the noble metal silver and gold were also listed for comparison
element Si Ge Al Ga In P As Sb Bi Te Cd Hg Se Ag Au abundance/ppm 270k 1.5 82k 18 0.16 1k 2.1 0.2 0.025 0.005 0.11 0.05 0.05 0.08 0.003 density/（g/cm3） 2.33 5.35 2.70 5.91 7.30 1.82 5.73 6.68 9.8 6.25 8.65 13.5 4.81 10.5 19.3 melting point/°C 1410 938 660 29.8 157 Sub. 817 631 271 449 321 -39 221 962 1064
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Yong-Gang ZHANG, Yi GU, Ying-Jie MA, Xiu-Mei SHAO, Xue LI, Hai-Mei GONG, Jia-Xiong FANG. The magic of III-Vs[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 941
Paper Information
Category: Research Articles
Received: Sep. 5, 2022
Accepted: --
Published Online: Feb. 6, 2023
The Author Email: Yong-Gang ZHANG (zhangyonggang@mail.sitp.ac.cn)
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