Fig. 1. Schematic structures of the InAs/In_0.83Al_0.17As quantum wells grown on Ga_xIn_1-xP buffer and GaAs_yP_1-y buffer

Fig. 2. Lattice constants and band gaps of the InAs/In_0.83Al_0.17As quantum wells grown on Ga_xIn_1-xP buffer（samples 1）and GaAs_yP_1-y buffer（samples 2）

Fig. 3. 20 × 20 µm² AFM images of the InAs/In_0.83Al_0.17As quantum well structures：grown on（a）Ga_xIn_1-xP buffer（samples 1）and（b）GaAs_yP_1-y buffer（samples 2）

Fig. 4. HRXRD（004）scanning curves（the black one）and simulated curves（the red one）of the InAs/In_0.83Al_0.17As quantum well structures grown on（a）Ga_xIn_1-xP buffer（sample 1）and（b）GaAs_yP_1-y buffer（sample 2）

Fig. 5. Symmetric（004）and asymmetric（115）reciprocal space maps of the InAs/In_0.83Al_0.17As quantum well structures grown on（a）Ga_xIn_1-xP buffer and（b）GaAs_yP_1-y buffer

Fig. 6. PL spectra of sample 1（on Ga_xIn_1-xP buffer）and sample 2（on GaAs_yP_1-y buffer）

Fig. 7. Temperature-dependent PL intensity and FWHM of sample 1（on Ga_xIn_1-xP buffer）and sample 2（on GaAs_yP_1-y buffer）