Chinese Journal of Lasers, Volume. 38, Issue 1, 102002(2011)
Beam Quality of High Power Vertical-Cavity Bottom-Emitting Semiconductor Lasers
[8] [8] International Organization for Standardization, Lasers and laser-related equipment. Test methods for laser beam parameters, beam widths, divergence angle and beam propagation factor [S]. ISO 11146, 1996
[9] [9] Zhou Bingkun, Gao Yizhi, Chen Tirong et al.. The Principle of Laser (The Fourth Edition) [M]. Beijing: National Defense Industry Press, 2000. 75
[10] [10] Eric R. Hegblom, Near M. Margalit, Brian J. Thibeault et al.. Current spreading in apertured vertical cavity lasers[C]. SPIE, 1997, 3003: 176~180
[11] [11] Li Ping, Sun Jiangqiang, Chen Huimin et al.. Study the model of laser diode emitted beam based on multimode Gaussian distribution[C]. SPIE, 2007, 6824: 68241H
[12] [12] Du Baoxun.The Principle of Semiconductor Lasers [M].Beijing: Arms Industry Press, 2004. 108
[13] [13] Spilios A. Riyopoulos, D. Dialetis, J.Liu et al.. Generic representation of active cavity VCSEL eigenmodes by optimized waist Gauss-Laguerre modes[J]. IEEE J. Sel. Top. Quantum Electron., 2001, 7(2): 312~327
[14] [14] Jiang Jianping. Semiconductor Laser[M]. Beijing: Publishing House of Electronics Industry, 2000
[15] [15] Anthony A. Tovar. Multi-Gaussian beams-a super-Gaussian alternative[C]. SPIE, 2000, 3930: 87~94
Get Citation
Copy Citation Text
Cui Jinjiang, Ning Yongqiang, Jiang Chenyu, Wang Fan, Gao Jing, Zhang Xing, Wang Zhenfu, Wu Xiaodong, Tan Huiming. Beam Quality of High Power Vertical-Cavity Bottom-Emitting Semiconductor Lasers[J]. Chinese Journal of Lasers, 2011, 38(1): 102002
Category: Laser physics
Received: Mar. 18, 2010
Accepted: --
Published Online: Dec. 24, 2010
The Author Email: Jinjiang Cui (cuijjciomp@yahoo.com.cn)