Research on the beam quality of high-power bottom-emitting laser-diode from the M2 factor, the far field divergence angle, near field and far-field intensity distribution is done. Analysis of different device parameters on the beam quality is also made. Vertical cavity surface emitting laser (VCSEL) array with a novel arrangement is designed. By the modulation of the aperture size and the centre spacing of the units, high power density up to 1 kW/cm2 and good beam property of Gaussian far-field distribution at 4 A injecting current are obtained. Compared with the single device and the 4×4 two-dimensional array with the same total lasing area, the novel array is better in the property of lasing spectra and far-field distribution, etc.