Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbClxBr3−x crystal

Longxing Su; Bingheng Meng; Heng Li; Zhuo Yu; Yuan Zhu; Rui Chen

doi:10.1364/PRJ.539352

Photonics Research, Volume. 13, Issue 2, 286(2025)

Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl_xBr_3−x crystal

Longxing Su^1,2、*, Bingheng Meng³, Heng Li², Zhuo Yu², Yuan Zhu^2,5, and Rui Chen^4,6

Author Affiliations

¹International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China

²School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China

³State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China

⁴Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

⁵e-mail: zhuy3@sustech.edu.cn

⁶e-mail: chenr@sustech.edu.cn

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Figures & Tables(10)

Fig. 1. The room temperature (a) XRD pattern, (b) Raman spectrum, (c) PL spectrum, and (d) PLQY of the as-synthesized CsPbClxBr3−x crystal.

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Fig. 2. The XPS spectra of (a) Cs-3d, (b) Pb-4f, (c) Cl-2p, and (d) Br-3d core electrons; (e) the valence band scanning spectrum of CsPbClxBr3−x relative to the XPS spectrum of Pb-5d_7/2 core electron; (f) the UPS spectrum of CsPbClxBr3−x.

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Fig. 3. (a) The room temperature PL spectra of the CsPbClxBr3−x crystal under different excitation densities; (b) the relationship between the peak intensity and the excitation density; (c) the photon energy as a function of the excitation density; (d) temperature-dependent PL spectra of the CsPbClxBr3−x crystal under the excitation density of 5.9 μJ/cm2; (e) the emission intensity as a function of the tested temperature; (f) temperature-dependent photon energies of peak A and peak B.

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Fig. 4. (a) The ASE from the CsPbClxBr3−x crystal under various pumping densities; (b) the PL intensity (black) and FWHM (blue) as a function of the pumping density; (c) the ASE peak energy as a function of the pumping density.

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Fig. 5. (a) The schematic diagram of the CsPbClxBr3−x photodetector; (b) the I-V curves of the CsPbClxBr3−x photodetector under dark and 400 nm light illumination; (c) the fast response V-t measurement and (d) the fitting of the decay trace.

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Fig. 6. (a) The energy band diagram of the InGa/CsPbClxBr3−x/InGa device versus vacuum energy level; (b) the response spectra of CsPbClxBr3−x and CsPbBr3 photodetectors; (c) the wavelength-dependent responsivity of the CsPbClxBr3−x photodetector under different bias voltages; (d) the responsivity at 450 nm as a linear function of the applied voltage; (e) the wavelength-dependent detectivity of the CsPbClxBr3−x photodetector under different bias voltages; (f) the detectivity at 450 nm as a linear function of the applied voltage.

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Fig. 7. The bright field (a), (c), (e) and dark field (b), (d), (f) optical images of the CsPbClxBr3−x crystal at different magnifications.

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Fig. 8. The energy band diagram of the CsPbClxBr3−x crystal.

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Fig. 9. The external quantum efficiency (EQE) of the CsPbClxBr3−x photodetector.

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Table 1. Comparison of the ASE Parameters Reported for CsPbX₃ Perovskites

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Table 1. Comparison of the ASE Parameters Reported for CsPbX₃ Perovskites

Morphology	Sample Size	Emission Wavelength	Threshold	FWHM	Growth Temperature	Ref.
${CsPbCl}_{x} {Br}_{3 - x}$ single crystal	0.5–2 mm	$\sim 456 nm$	$106 μJ / {cm}^{2}$	3.6 nm	RT	This work
${CsPbCl}_{x} {Br}_{3 - x}$ quantum dots	10.4–11.5 nm	468, 498 nm	$43 - 45 μJ / {cm}^{2}$	6.71, 6.15 nm	-	[11]
${CsPbCl}_{x} {Br}_{3 - x}$ quantum dots	$12 \pm 1 nm$	440, 470, 506 nm	$20 - 50 μJ / {cm}^{2}$	5.7–8.5 nm	190°C	[12]
${CsPbCl}_{x} {Br}_{3 - x}$ nanofilm	-	495 nm	$56.1 μJ / {cm}^{2}$	$\sim 5 nm$	25°C–200°C	[13]
${CsPbBr}_{3}$ single crystal	650–700 μm	538 nm	$1.38 mJ / {cm}^{2}$	$\sim 4 nm$	800°C	[14]
${CsPbBr}_{3}$ nanoparticle	$\sim 12 nm$	$\sim 528 nm$	$1.2 μJ / {cm}^{2}$	$\sim 4 nm$	185°C	[58]
${CsPbBr}_{3}$ nanocrystal	$\sim 8.67 nm$	526.7 nm	$2.55 mJ / {cm}^{2}$	7.8 nm	180°C	[59]
${CsPbBr}_{3}$ quantum dots	5–20 nm	$\sim 538 nm$	$320 μJ / {cm}^{2}$	$\sim 4 nm$	440°C–530°C	[60]
${CsPbBr}_{3}$ microplate	0.77–6.5 μm	537 nm	$300 μJ / {cm}^{2}$	$\sim 1 nm$	-	[61]

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Longxing Su, Bingheng Meng, Heng Li, Zhuo Yu, Yuan Zhu, Rui Chen, "Amplified spontaneous emission and photoresponse characteristics in highly defect tolerant CsPbCl_xBr_3−x crystal," Photonics Res. 13, 286 (2025)

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