Fig. 1. q-v pinched hysteresis loops of memcapacitor 忆容器的q-v特性曲线

Fig. 2. Time domain waveforms of C_m, v_C and flux under periodic excitation signal: (a) ; (b) ; (c) . 正弦交流电激励下忆容器 、 和 的时域波形(a) ; (b) ; (c)

Fig. 3. Dynamic path map of memcapacitor ( ): (a)Dynamic path map ; (b) Memcapacitor circuit and Vs waveform. 忆容器的动态路径图( )　(a)动态路径图; (b)忆容器电路和Vs波形

Fig. 4. A voltage-controlled memcapacitor emulator压控型忆容器仿真器

Fig. 5. q-v pinched hysteresis loops of the memcapacitor simulator: the abscissa and ordinate correspond to and , respectively: (a) Results of circuit simulation.The display range of ordinates is [–10, 10] V, and the display range of abscissa is [–5, 5] V; (b) result of hardware experiment circuit; the abscissa and ordinates are shown as 1 V/lattice and 2 V/lattice, respectively. 忆容器仿真器的 曲线(横坐标和纵坐标分别对应于 和 )　(a)仿真电路的测试结果图, 纵坐标显示范围[–10, 10] V, 横坐标显示范围[–5, 5] V; (b)硬件实验电路的测试结果, 横坐标和纵坐标显示分别为1 V/格和2 V/格

Fig. 6. Multivibrator based on memcapacitor.基于忆容器的多谐振荡器

Fig. 7. In R₁₀C_m circuit, the time-domain waveforms of flux and voltage of the memcapacitor and voltage v_R: (a) ; (b) v_C; (c) v_O; (d) v_R. 回路中忆容器的磁通、电压和 的时域波形　(a) ; (b) v_C; (c) v_O; (d) v_R

Fig. 8. Simulation waveforms of memcapacitor multivibrator: The display range of vertical coordinates 、 and are all , but the display range of vertical coordinates of is . 忆容器多谐振荡器仿真电路波形( 、 和 纵坐标的显示范围均为 , 纵坐标的显示范围是 )

Fig. 9. Measurement of oscillating waveforms in hardware circuit: (The vertical axes of , and are both 2 V/lattice, the vertical axes of is 500 mV/lattice, The horizontal axes of all voltages are 100 ms/lattice). 硬件电路实测振荡波形( 、 和 幅值均为2 V/格, 为500 mV/格, 时间轴均为100 ms/格)

Fig. 10. Curve of Oscillator Performance Parameters with Circuit parameter changes ( as a parameter variable): (a) T; (b) f; (c) D. 作为参变量时, 振荡器性能参数随电路参数变化的曲线　(a) T; (b) f; (c) D

Fig. 11. Curve of oscillator performance parameters with circuit parameter changes ( as a parameter variable): (a) T; (b) f; (c) D. 作为参变量时, 振荡器性能参数随电路参数变化的曲线　(a) T; (b) f; (c) D

Fig. 12. Curve of Oscillator Performance Parameters with Circuit parameter changes ( as a parameter variable): (a) T; (b) f; (c) D. 作为参变量时, 振荡器性能参数随电路参数变化的曲线　(a) T; (b) f; (c) D

Fig. 13. Experimental oscillation waveforms of memcapacitor multivibrator: (a) ; (b) . The vertical axes of 、 and in Fig(a) and Fig (b) are both 2 V/lattice. The vertical and horizontal axes of in Fig(a) are 100 mV/lattice and 50 ms/lattice, respectively. The vertical and horizontal axes of in Fig(b) are 5 V/lattice and 100 ms/lattice, respectively. 忆容器振荡器硬件电路实验振荡波形(图(a)和(b)中 、 和 的纵轴均为2 V/格)　(a) , 其中 纵轴为100 mV/格, 时间轴为50 ms/格; (b) , 其中 纵轴为5 V/格, 时间轴为100 ms/格

Fig. 14. Experimental oscillation waveforms of memcapacitor multivibrator: (a) ; (b) . The vertical axis of 、 and in Fig. (a) and Fig. (b) are both 2 V/lattice. The vertical and horizontal axes of in Fig. (a) are 500 mV/lattice and 50 ms/lattice, respectively. The vertical and horizontal axes of in Fig. (b) are 5 V/lattice and 100 ms/lattice, respectively. 忆容振荡器硬件电路实验振荡波形(图中 、 和 纵轴均为2 V/格, 图(a)中 纵轴为500 mV/格, 时间轴为50 ms/格, 图(b)中 纵轴为5 V/格, 时间轴为100 ms/格)　(a) ; (b)

Fig. 15. Experimental oscillation waveforms of memcapacitor multivibrator: (a) C₂ = 146 nF; (b) C₂ = 256 nF. The vertical axes of 、 and in Fig. (a) and Fig. (b) are both 2 V/lattice. The vertical and horizontal axes of in Fig. (a) are 500 mV/lattice and 50 ms/lattice, respectively. The vertical and horizontal axes of in Fig. (b) are 2 V/lattice and 100 ms/lattice, respectively. 忆容振荡器硬件电路实验振荡波形(图中 、 和 纵轴均为2 V/格, 图(a)中 纵轴为500 mV/格, 时间轴为50 ms/格, 图(b)中 纵轴为2 V/格, 时间轴为100 ms/格)　(a) C₂ = 146 nF; (b) C₂ = 256 nF

Fig. 16. The pinched hysteresis loops of memcapacitor with different values of R₁₀ in oscillating circuit: (a) ; (b) . The horizontal and vertical axes correspond to and , respectively. 为不同值时振荡电路中忆容器的滞回曲线(横坐标和纵坐标分别对应于 和 )　(a) ; (b)