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Laser & Optoelectronics Progress, Volume. 58, Issue 21, 2123001(2021)

Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths

Yongbing Zhao* and Chenchen Qian
Author Affiliations
  • School of Physics and Electronics, Yancheng Teachers University, Yancheng , Jiangsu 224007, China
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    Article index updated: Sep. 11, 2025

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    Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001

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    Paper Information

    Category: Optical Devices

    Received: Jan. 19, 2021

    Accepted: Mar. 8, 2021

    Published Online: Nov. 1, 2021

    The Author Email: Yongbing Zhao (zhaoyb@yctu.edu.cn)

    DOI:10.3788/LOP202158.2123001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology