Journal of Synthetic Crystals, Volume. 49, Issue 12, 2244(2020)
Effect of He Ion Implantation on the Defect Behaviour in Ge
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
KE Haipeng, OU Xuewen, KE Shaoying. Effect of He Ion Implantation on the Defect Behaviour in Ge[J]. Journal of Synthetic Crystals, 2020, 49(12): 2244
Paper Information
Category:
Received: --
Accepted: --
Published Online: Jan. 26, 2021
The Author Email: KE Haipeng (kehaipeng@163.com)
CSTR:32186.14.
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20