Laser & Optoelectronics Progress, Volume. 59, Issue 9, 0922022(2022)

Research on Mask Defect Inspection and Compensation Techniques in Extreme Ultraviolet Lithography

Wei Cheng1,2, Sikun Li1,2, Zinan Zhang1,2, and Xiangzhao Wang1,2、*
Author Affiliations
  • 1Laboratory of Information Optics and Opt-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(6)
    Simplified model for defective EUV multilayer based on single surface approximation[10]
    Simulation model based on equivalent film layer method. (a) Partition of defective multilayer; (b) thickness distribution of layers for defect-free and defective multilayer [5]
    Schematic diagram of the optical setup for the ABI[40]
    Flow chart of the defect profile parameter reconstruction[19]
    Schematic diagram of two initialization repair patterns. (a) Initialization pattern 1; (b) initialization pattern 2[4]
    • Table 1. Penetration depth of different wavelengths used in the EUV multilayer [37]

      View table

      Table 1. Penetration depth of different wavelengths used in the EUV multilayer [37]

      Wavelength /nm13.5193/199257/266365488532e-beam
      Penetration depth(bi-layers)3132512111-2
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    Wei Cheng, Sikun Li, Zinan Zhang, Xiangzhao Wang. Research on Mask Defect Inspection and Compensation Techniques in Extreme Ultraviolet Lithography[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922022

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    Paper Information

    Category: Optical Design and Fabrication

    Received: Mar. 28, 2022

    Accepted: Apr. 12, 2022

    Published Online: May. 10, 2022

    The Author Email: Xiangzhao Wang (wxz26267@siom.ac.cn)

    DOI:10.3788/LOP202259.0922022

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