Laser & Optoelectronics Progress, Volume. 59, Issue 9, 0922022(2022)
Research on Mask Defect Inspection and Compensation Techniques in Extreme Ultraviolet Lithography
Fig. 1. Simplified model for defective EUV multilayer based on single surface approximation[10]
Fig. 2. Simulation model based on equivalent film layer method. (a) Partition of defective multilayer; (b) thickness distribution of layers for defect-free and defective multilayer [5]
Fig. 5. Schematic diagram of two initialization repair patterns. (a) Initialization pattern 1; (b) initialization pattern 2[4]
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Wei Cheng, Sikun Li, Zinan Zhang, Xiangzhao Wang. Research on Mask Defect Inspection and Compensation Techniques in Extreme Ultraviolet Lithography[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922022
Category: Optical Design and Fabrication
Received: Mar. 28, 2022
Accepted: Apr. 12, 2022
Published Online: May. 10, 2022
The Author Email: Xiangzhao Wang (wxz26267@siom.ac.cn)