Chinese Journal of Lasers, Volume. 36, Issue s2, 378(2009)
Investigation on the In-Situ Spectroscopic Ellipsometry of GaN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy
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Yuan Jinshe, Liu Yingdan, Pan Defang. Investigation on the In-Situ Spectroscopic Ellipsometry of GaN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy[J]. Chinese Journal of Lasers, 2009, 36(s2): 378
Paper Information
Category: materials and thin films
Received: --
Accepted: --
Published Online: Dec. 30, 2009
The Author Email: Yuan Jinshe (jesseyuan@cqnu.edu.cn)
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