Fig. 1. Schematics of broadband terahertz metamaterial structure. (a) Schematic of cell array; (b) top view of cell structure

Fig. 1. Schematics of broadband terahertz metamaterial structure. (a) Schematic of cell array; (b) top view of cell structure

Fig. 2. Variations of absorptivity of the absorber, as well as the real and imaginary parts of permittivity of VO₂ with conductivity. (a) Absorptivity; (b) real part of permittivity; (c) imaginary part of permittivity

Fig. 2. Variations of absorptivity of the absorber, as well as the real and imaginary parts of permittivity of VO₂ with conductivity. (a) Absorptivity; (b) real part of permittivity; (c) imaginary part of permittivity

Fig. 3. Absorption curves of metamaterial perfect absorbers with and without VO₂ under various SiO₂ thicknesses

Fig. 3. Absorption curves of metamaterial perfect absorbers with and without VO₂ under various SiO₂ thicknesses

Fig. 4. Variations of real and imaginary parts of relative impedance under different VO₂ conductivities. (a) Real part; (b) imaginary part

Fig. 4. Variations of real and imaginary parts of relative impedance under different VO₂ conductivities. (a) Real part; (b) imaginary part

Fig. 5. Electric field intensity at two nearly perfect absorption peaks. (a) f₁=0.82 THz; (b) f₂=1.6 THz

Fig. 5. Electric field intensity at two nearly perfect absorption peaks. (a) f₁=0.82 THz; (b) f₂=1.6 THz

Fig. 6. Variations of absorptivity with incident angle and polarization angel. (a) Variation of absorptivity with incident angle at TE mode; (b) variation of absorptivity with incident angle at TM mode; (c) variation of absorptivity with polarization angles at TE mode

Fig. 6. Variations of absorptivity with incident angle and polarization angel. (a) Variation of absorptivity with incident angle at TE mode; (b) variation of absorptivity with incident angle at TM mode; (c) variation of absorptivity with polarization angles at TE mode