Optics and Precision Engineering, Volume. 17, Issue 4, 695(2009)

High peak power semiconductor laser module for producing nanosecond pulse

CHEN Yan-chao*, ZHAO Bai-qin, and LI Wei
Author Affiliations
  • [in Chinese]
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    References(8)

    [1] [1] ZHU N, LIN J L, WANG G J, et al.. Application of avalanche transistors in nanosecond pulse driver[J].Optoelectronic Technology and Information,2005,18(6):29-32.(in Chinese)

    [3] [3] WANG J H, YAO H B, XUE ZH J, et al.. Design of sending circuit for laser short range dynamic detection system[J]. Infrared and Laser Engineering, 2006,35:709-712.(in Chinese)

    [7] [7] CHENG C, NIN H Z,SHANG J Z, et al.. Characterization of parasitics in TO-packaged high-speed laser modules[J]. IEEE, Trans.Adv.Packag.,2007,30:97-103.

    [8] [8] VAINSHTEIN S N,KOSTAMOVAARA J T,KILPELA A J,et al..High speed, high current driver for operation with low ohmic load[J]. Electronic Letters,1997,33(10):904-906

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    [1] CHEN Yan-chao, FENG Yong-ge, ZHANG Xian-bing. Large current nanosecond pulse generating circuit for driving semiconductor laser[J]. Optics and Precision Engineering, 2014, 22(11): 3145

    [2] CONG Meng-long, LI Li, CUI Yan-song, ZHANG Zhen-qian, WANG Yi-ding. Design of high stability digital control driving system for semiconductor laser[J]. Optics and Precision Engineering, 2010, 18(7): 1629

    [3] LIU Di, NING Yong-qiang, ZHANG Jin-long, ZHANG Xing, WANG Li-jun. High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array[J]. Optics and Precision Engineering, 2012, 20(10): 2147

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    CHEN Yan-chao, ZHAO Bai-qin, LI Wei. High peak power semiconductor laser module for producing nanosecond pulse[J]. Optics and Precision Engineering, 2009, 17(4): 695

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    Paper Information

    Category:

    Received: Jul. 25, 2008

    Accepted: --

    Published Online: Oct. 28, 2009

    The Author Email: CHEN Yan-chao (cyc@semi.ac.cn)

    DOI:

    CSTR:32186.14.

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