[1] [1] Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi et al.. Role of Si1–xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor[J]. Appl. Phys. Lett., 1999, 75: 2948

[2] [2] D.K. Nayak, S.C.S.Woo, J.S.Park et al.. High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si[J]. Appl. Phys. Lett., 1993, 62: 2853

[3] [3] T. Tezuka, N. Sugiyama, S. Takagi. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction[J]. Appl. Phys. Lett., 2001, 79: 1798

[4] [4] E. A. Fitzgerald, Y. H. Xie, M. L. Green et al.. Totally relaxed GexSi1–x layers with low threading dislocation densities grown on Si substrates[J]. Appl. Phys. Lett., 1991, 59: 811

[5] [5] H. J. Osten, J. Griesche, S. Scalese. Substitutional carbon incorporation in epitaxial Si1-yCy on Si(001) grown by molecular beam epitaxy [J]. Appl. Phys. Lett., 1999, 74(6): 836

[6] [6] V. Loup, J. M. Hartmann, G. Rolland et al.. Reduced pressure chemical vapor deposition of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructures [J]. J. Vac. Sci. Technol. B, 2002, 20(3): 1048

[7] [7] H. J. Osten, R. Barth, G. Fischer et al.. Carbon-containing group IV heterostructures on Si: properties and device applications [J]. Thin Solid Films, 1998, 321: 11

[8] [8] H. J. Osten, Myeongcheol Kim, K Pressel et al.. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1-yCy on Si(001) [J]. J. Appl. Phys., 1996, 80(12): 6711

[9] [9] Jian Mi, Patricia Warren, Marc Gailhanou et al.. Epitaxial growth of Si1-x-yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane [J]. J. Vac. Sci. Technol. B, 1996, 14(3): 1660

[10] [10] K. Eberl, S. S. Iyer, S. Zollner et al.. Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system [J]. Appl. Phys. Lett., 1992, 60(24): 3033

[11] [11] A. Fissela, E. Bugielb, C.R. Wanga et al.. Formation of Si twinning-superlattice: First step towards Si polytype growth [J]. Appl. Phys. Lett., 1999, 74(6): 836