Compensation Effect of Carbon Impurities on the Resistivity of p-GaN

Xinning Wu; Zhaoyang Liu; Mingjia Liu; Yuntao Zhao; Haoran Qi; Mei Zhou; Huixing Shen; Degang Zhao

doi:10.3788/CJL202148.1303001

Chinese Journal of Lasers, Volume. 48, Issue 13, 1303001(2021)

Compensation Effect of Carbon Impurities on the Resistivity of p-GaN

Xinning Wu¹, Zhaoyang Liu¹, Mingjia Liu¹, Yuntao Zhao¹, Haoran Qi¹, Mei Zhou^1、*, Huixing Shen^1、**, and Degang Zhao²

Author Affiliations

¹Department of Applied Physics, College of Science, China Agricultural University, Beijing 100083, China

²State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Figures & Tables(4)

Fig. 1. Room-temperature PL spectra for samples A, B, C, D, and E

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Fig. 2. Measuring results of secondary ion mass spectroscopy for three samples. (a) Sample B; (b) sample C; (c) sample D

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Table 1. Growth condition and Hall test results for p-GaN samples

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Table 1. Growth condition and Hall test results for p-GaN samples

Sample	Growthtemperature /℃	Reactionchamberpressure /kPa	NH₃ flow /(L·min^-1)	TMGa flow /(mL·min^-1)	Cp₂Mgflow /(mL·min^-1)	Resistivity /(Ω·cm)	Holemobility /(cm²·V^-1·s^-1)	Holeconcentration /(10¹⁷ cm^-3)
A	1000	13.3	5	18	110	2.16	13.4	2.15
B	1020	13.3	5	18	110	2.22	8.6	3.27
C	1030	13.3	5	18	110	1.49	10.3	4.07
D	1040	13.3	5	18	110	1.51	9.3	4.46
E	1050	13.3	5	18	110	1.43	9.1	4.81

Table 2. Particle concentration of magnesium, carbon, and hydrogen, which measured by secondary ion mass spectra
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Table 2. Particle concentration of magnesium, carbon, and hydrogen, which measured by secondary ion mass spectra
Sample Concentration of particles /(10¹⁹ cm^-3) Growth temperature /℃
Mg C H
B 1.60 0.0400 0.220 1020
C 2.16 0.0357 0.275 1030
D 2.00 0.0170 0.150 1040

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Xinning Wu, Zhaoyang Liu, Mingjia Liu, Yuntao Zhao, Haoran Qi, Mei Zhou, Huixing Shen, Degang Zhao. Compensation Effect of Carbon Impurities on the Resistivity of p-GaN[J]. Chinese Journal of Lasers, 2021, 48(13): 1303001

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