Fig. 1. The calculation framework of the local reflectivity and transmissivity.

Fig. 2. (a) Reflectivity as a function of temperature for Si(111), Si(333), Si(555) and Si(777). (b) Rocking curve calculations of Si(777) at different temperatures (100, 300, 500 and 700 K).

Fig. 3. (a) Temperature dependence of the photon energy shift induced by and lattice expansion in C(400). (b) Temperature dependence of the photon energy shift induced by and lattice expansion in Si(400). The calculation is performed under the assumption of a uniform thermal load.

Fig. 4. Comparative analysis of results obtained at 2, 6 and 10 μs using Bushuev’s method (circles) and our proposed method (solid lines). The black curve refers to the undeformed crystal at 300 K.

Fig. 5. (a) Time evolution of the reflectivity of C(400). (b) Time evolution of the transmissivity of C(400). (c) Time evolution of the temperature at the crystal’s center (green curve). The reflectivity curves for untuned and tuned cases are represented by circles and stars, respectively. (d) Time evolution of the normalized bandwidth and photon energy shift. The data have been normalized based on the rocking curve bandwidth (0.78 eV) of C(400) at 200 K. (e) Time evolution of the tuning angle and the angular speed.