Fig. 1. Simplified engineering circuit diagram of avalanche diode peripheral circuit module

Fig. 2. Avalanche voltage versus temperature for probe 1

Fig. 3. Dark count rate versus over voltage for probe 1 at different temperatures

Fig. 4. Dark count rate versus temperature for probe 1 at over voltage of 13 V

Fig. 5. After-pulse probability versus bias voltag for probe 1 at temperature of 192 K

Fig. 6. Relation between parameters for probe 2 at temperature of 192 K. (a) Dark count rate versus bias voltage; (b) after-pulse probability versus bias voltage