In this work, the temperature characteristics of a single-photon avalanche diode working in Geiger mode are studied. The experimental results show that the avalanche voltage of the avalanche diode linearly decreases with the decrease in temperature and the voltage temperature coefficient is 0.42 V/K. When the avalanche diode works at an avalanche voltage of more than 13 V, the dark count rate decreases exponentially with the decrease in temperature. In addition, the dark count rate decreases by half for each 8.58 K decrease in temperature. Furthermore, when the temperature drops from 274 K to 192 K, the dark count rate of the avalanche diode also decreases from 13900 Hz to 14 Hz. The single-photon avalanche diode with an operating temperature of 260 K and a dark count rate of 58 Hz is cooled to 192 K. The bias voltage at both ends of the diode is adjusted to ensure that the dark count rate is reduced to 0.064 Hz and the after-pulse probability is 6.7% when the detection efficiency is 50% at wavelength of 852 nm. Thus, the performance of the single-photon detector is significantly improved. Moreover, the single-photon detector with an ultra-low dark count rate has significant applications in quantum communication and weak light detection.