[1] [1] Wang Y. Study on the nearinfrared external cavity semiconduct laser of Littrow configuration[D]. Changchun: Changchun Institute of Optics, Fine Mechanics Physics, Chinese Academy of Sciences, 2020.(in Chinese)

[2] Jie Hyun Lee, Mahn Yong Park, Cheol Young Kim, et al. Tunable external cavity laser based on polymer waveguide platform for WDM access network[J]. IEEE Photonics Technology Letters, 17, 1956-1958(2005).

[3] [3] Sun X M. They application of interferometry using laser diode[M]. Beijing: National Defense Industy Press, 1998. (in Chinese)

[4] Huan K W, Zheng F, Shi X G, et al. The system of 3D LADAR base on FM/CW principles[J]. Journal of Changchun University of Science and Technology, 61-64(2008).

[5] Mellis J, Al-Chalabi S A, Cameron K H, et al. Miniature packaged external-cavity semiconductor laser with 50 GHz continuous electrical tuning range[J]. Electronics Letters, 24, 988-989(1988).

[6] Mroziewicz B. External cavity wavelength tunable semiconductor lasers - a review[J]. Opto-Electronics Review, 16, 347-366(2008).

[7] Littman M G, Metcalf H J. Spectrally narrow pulsed dye laser without beam expander[J]. Appl Opt, 17, 2224-2227(1978).

[8] [8] Heim P, Merritt S A, Fan Z F, et al. Singleangledfacet laser diode f tunable external cavity lasers[C]Sarnoff Symposium. IEEE, 1995.

[9] Chen D J, Fang Z J, Cai H W, et al. Polarization characteristics of an external cavity diode laser with Littman configuration[J]. IEEE Photonics Technology Letters, 21, 984-986(2009).

[10] [10] Yang Z P. Research on 1.06 μm tunable external cavity semiconduct laser[D]. Chengdu: Southwest Jiaotong University, 2015. (in Chinese)

[11] [11] Zhang Y. Research of external cavity semiconduct laser[D]. Tianjin: Tianjin University, 2005. (in Chinese)

[12] Liu Y, Liu Y, Xiao H D, et al. 638 nm narrow linewidth diode laser with a grating external cavity[J]. Chinese Optics, 13, 1249-1256(2022).

[13] Gao Z Q, Huang Y, Zhang Y L, et al. Widely tunable external cavity near-infrared semiconductor laser at 4.53 μm[J]. Journal of Telemetry, Tracking and Command, 38, 55-61(2017).

[14] Liu R Z, Bao B X, Me N, et al. Experimental research on volume-bragg-grating external cavity red-light semiconductor lasers[J]. Chinese Journal of Luminescence, 40, 1401-1408(2019).

[15] Wells S R, Miyabe M, Hasegawa S. Design, construction and characterization of a single unit external cavity diode laser coupled tapered amplifier system for atomic physics[J]. Optics and Laser Technology, 126, 106118(2020).

[16] [16] Cai B R, Chen Z, Liu X. Semiconduct Laser[M]. Beijing: Publishing House of Electronics Industry, 1995: 4042. (in Chinese)

[17] Osmundsen J, Gade N. Influence of optical feedback on laser frequency spectrum and threshold conditions[J]. IEEE Journal of Quantum Electronics, 19, 465-469(2003).

[18] Chai Y J, Zhang H Y, Zhou B K. Linewidth performance analysis of semiconductor lasers with strong feedback external cavity[J]. Chinese Journal of Semiconductors, 885-889(1995).

[19] Lei P S, Xue L F, He J, et al. Investigation of the output characteristics of Littrow-type grating external cavity semiconductor diode[J]. Laser & Optoelectronics Progress, 48, 031402(2011).