Journal of Semiconductors, Volume. 44, Issue 12, 124101(2023)
Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM
[2] H H Radamson, E Simeon. CMOS past, present and future. Amsterdam: Elsevier, 105(2018).
[19] Y C Liu, C T Tu, C E Tsai et al. First highly stacked Ge0.95Si0.05 nGAAFETs with record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and high Gm, max = 340 μS (13000 μS/μm) at VDS=0.5V by wet etching, 1(2021).
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Zhenzhen Kong, Hongxiao Lin, Hailing Wang, Yanpeng Song, Junjie Li, Xiaomeng Liu, Anyan Du, Yuanhao Miao, Yiwen Zhang, Yuhui Ren, Chen Li, Jiahan Yu, Jinbiao Liu, Jingxiong Liu, Qinzhu Zhang, Jianfeng Gao, Huihui Li, Xiangsheng Wang, Junfeng Li, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM[J]. Journal of Semiconductors, 2023, 44(12): 124101
Category: Articles
Received: Jul. 7, 2023
Accepted: --
Published Online: Mar. 13, 2024
The Author Email: Wang Guilei (GLWang)