Fig. 1. (a) Schematic diagram of the electronic device irradiation test system in the ⁶⁰Co source chamber, (b) Enlarged image of devices in Fig.(a)

Fig. 2. Thermal EMMI patterns in different magnification and imaging modes of the irradiated MOSFET amplifier(a~c) Before decapsulation, (d~i) After decapsulation

Fig. 3. SEM images of the failure region of the irradiated MOSFET amplifier (a) Plane, (b) Cross-sectional, (c) Magnified rectangle region in Fig.(b)

Fig. 4. TEM and HRTEM images of the gate, source, and adjacent regions of the irradiated MOSFET amplifier. Fig.(b), Fig.(d), and Fig.(g) are the magnified images of the dotted-line rectangles b, d, and g in Fig.(a), respectively. Fig.(c) is the magnified image of the dotted-line rectangle c in Fig.(b). Fig.(e) is the magnified image of the rectangle e in Fig.(d). Fig.(f) is the reduced fast Fourier transform (RFFT) image of the SAED pattern in Fig.(e). Fig.(h) and Fig.(i) are the magnified images of the rectangles h and i in Fig.(g), respectively.

Fig. 5. HAADF images and the ratios of the Si and the O elements in the corresponding regions of the gate oxide SiO₂ layers at the bottom of the un-irradiated (a) and irradiated (b) thick trench MOSFET amplifiers

Fig. 6. Images of the source and adjacent regions of the irradiated MOSFET amplifier (a) HAADF image, (b) TEM bright-field, (c~i) Corresponding EDS-mapping element (Al, Ni, P, O, Pb, Sn, Au) distribution