[1] [1] N. P. Barnes, W. J. Rodriguez, B. M. Walsh. HoTmYLF laser amplifiers［J］. J. Opt. Soc. Am. B, 1996, 13(12): 2872～2882

[2] [2] B. M. Walsh, N. P. Barnes, B. D. Bartolo. The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF［J］. J. Lumin., 2000, 90(1-2): 39～48

[3] [3] R. Gunnar, S. Knut. Modeling of laser-pumped Tm and Ho lasers accounting for upconversion and ground-state depletion［J］. IEEE J. Quantum Electron., 1996, 32(9): 1645～1656

[4] [4] J. G. Wang, Z. G. Zhang, J. Z. Xu et al.. Spectroscopic investigation on the properties of visible and near infrared emissions in Tm3+, Ho3+ co-doped YVO4 crystals［J］. Chinese Phys., 2000, 9(3): 210～215

[5] [5] C. Nagasawa, D. Sakaizawa, H. Hara et al.. Lasing characteristics of a CW Tm, HoYLF double cavity microchip laser［J］. Opt. Commun., 2004, 234: 301～304

[6] [6] J. Izawa, H. Nakajima, H. Hara et al.. Comparison of lasing performance of Tm, HoYLF laser by use of single and double cavities［J］. Appl. Opt., 2000, 39(15): 1418～1421

[7] [7] E. Kato, H. Noguchi, M. Nagai et al.. Significant progress in II-VI blue green laser diode lifetime［J］. Electron. Lett., 1998, 34(3): 282～284

[8] [8] G. J. Koch, A. N. Dharamsi, C. M. Fitzgerald et al.. Frequency stabilization of a HoTmYLF laser to absorption lines of carbon dioxide［J］. Appl. Opt., 2000, 39(21): 3664～3669

[9] [9] G. J. Koch, M. Petros, J. Yu et al.. Precise wavelength control of a single-frequency pulsed HoTmYLF laser［J］. Appl. Opt., 2002, 41(9): 1718～1721

[10] [10] P. A. Budni, L. A. Pomeranz, P. G. Schunemann. CW and Q-switched Ho:YAG pumped by TmYALO［C］. Asvanced Solid State Lasers, 1998, 19: 90～92

[11] [11] G. Neuroth, F. Wallrafen. Czochralski growth and characterization of pure and doped YAlO3 single crystal［J］. J. Cryst. Growth, 1999, 198/199(1): 435～439

[12] [12] Lu Yanling, Yang Yang, Wang Jun et al.. Spectral properties of Tm:YAP laser crystal［J］. Chinese J. Lasers, 2006, 33(7): 968～972

[13] [13] Wang Yuezhu, Duan Xiaoming, Ke Liang et al.. Room temperature efficient continuous wave laser diode-end-pumped Tm:YAP laser［J］. Chinese J. Lasers, 2009, 36(7): 1710～1713

[14] [14] Baoquan Yao, Yi Tian, Gang Li et al.. InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers［J］. Opt. Express, 2010, 18(13): 13574～13579

[15] [15] H. R. Chen, Y. G. Wang, C. Y. Tsai et al.. High-power passively mode-locked NdGdVO4 laser using single-walled carbon nanotubes as saturable absorber［J］. Opt. Lett., 2011, 36(7): 1284～1286

[16] [16] Ying Liu, Yonggang Wang, Jie Liu et al.. High power ultrafast NdYVO4 laser mode locked by single wall carbon nanotube absorber［J］. Appl. Phys. B, 2011, 104(4): 835～838

[17] [17] Chengcheng Liu, Yonggang Wang, Jie Liu et al.. Ultrafast YbY2SiO5 laser investigation based on a carbon nanotube absorber［J］. Appl. Opt., 2011, 50(19): 3229～3232

[18] [18] W. B. Cho, A. Schmidt, J. H. Yim et al.. Passive mode-locking of a Tm-doped bulk laser near 2 μm using a carbon nanotube saturable absorber［J］. Opt. Express, 2009, 17(13): 11007～11012

[19] [19] M. A. Solodyankin, E. D. Obraztsova, A. S. Lobach et al.. Mode-locked 1.93 μm thulium fiber laser with a carbon nanotube absorber［J］. Opt. Lett., 2008, 33(12): 1336～1338

[20] [20] Kejian Yang, Shengzhi Zhao, Guiqiu Li et al.. Diode-pumped passively Q-switched mode-locked c-cut NdGdVO4 laser with a GaAs coupler［J］. Opt. Mater., 2007, 29(9): 1153～1158