Chinese Journal of Lasers, Volume. 27, Issue 4, 372(2000)

An Numerical Simulation of the Melt-threshold of InSb Induced by CW Laser beams

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(6)

    [1] [1] Wang Zhonghe, Zhang Guangyin. Elementary Physics of Photonics. Beijing: National Defense Industry Press, 1998. 468~473 (in Chinese)

    [2] [2] J. R. Meyer, M. R. Kruer, F. J. Bartoli. Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs. J. Appl. Phys., 1980, 51(10):5513~5522

    [3] [3] J. R. Meyer, F. J. Bartoli, M. R. Kruer. Optical heating in semiconductors. Phys. Rev. B, 1980, 21(4):1559~1568

    [4] [4] Huang Kun, Han Ruqi. Elementary Physics of Semiconductors. Beijing: Science Press, 1979. 101~109 (in Chinese)

    [5] [5] J. R. Meyer, F. J. Bartoli, R. E. Allen.Photo-hall measurements on InSb. Bull. Am. Phys. Soc., 1978, 23:328~329

    [6] [6] F. Bartori, L. Esterowitz, M. Kruer et al.. Irreversible laser damage in ir detector materials. Appl. Opt., 1977, 16(11):2934~2937

    CLP Journals

    [1] Li Li, Lu Qisheng. Numerical Simulation of Dynamic Response of PC-Type HgCdTe Detector Irradiated by in-Band and Out-of-Band Laser Beams[J]. Acta Optica Sinica, 2008, 28(10): 1952

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. An Numerical Simulation of the Melt-threshold of InSb Induced by CW Laser beams[J]. Chinese Journal of Lasers, 2000, 27(4): 372

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    Paper Information

    Category: laser manufacturing

    Received: Nov. 16, 1998

    Accepted: --

    Published Online: Aug. 9, 2006

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