Chinese Journal of Lasers, Volume. 27, Issue 4, 372(2000)
An Numerical Simulation of the Melt-threshold of InSb Induced by CW Laser beams
By means of a numerical method, it deals with the problem of the melt-threshold of semiconductors induced by CW laser beam. The melt threshold as a functions of wavelength, power and irradiating time of irradiating laser are given. The influence of the carrier effects on the temperature rise and melt threshold, the distributions of temperature and carrier concentration in the targets are also discussed.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. An Numerical Simulation of the Melt-threshold of InSb Induced by CW Laser beams[J]. Chinese Journal of Lasers, 2000, 27(4): 372
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