[1] [1] L. T. Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl. Phys. Lett., 1990, 57(10): 1046～1048

[2] [2] Kimiaki Toshiyo, Masakasu Tokunsga, Shinji Takeoka et al.. Eletron spin resonance study of defects in Si1-xGex alloy nanocrystals embedded in SiO2 matrices: Mechanism of luminescence quenching[J]. J. Appl. Phys., 2001, 89(9): 4917～4920

[3] [3] Y. L. He, G. Y. Hu, M. B. Yu et al.. Conduction mechanism of hydrogenated nanocrystalline Silicon films[J]. Phys Rev B, 1999, 59(23): 15352～15357

[4] [4] Takehito Yoshida, Shigeru Takeyama, Yuka Yamada et al.. Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas[J]. Appl. Phys. Lett., 1996, 68(13): 1772～1774

[5] [5] Douglas H. Lowndes, Christopher M. Rouleau, T. Thundat et al.. Silicon and zinc telluride nanoparticles synthesized by pulsed laser ablation: size distributions and nanoscale structure[J]. Appl. Surf. Sci., 1998, 127～129: 355～361

[6] [6] Fu Guangsheng, Chu Lizhi, Zhou Yang et al.. Influence of pulse rate on morphology of nanocrystalline Silicon film prepared by pulsed laser deposition[J]. Chinese J. Lasers, 2005, 32(9): 1254～1257

[7] [7] Xinwei Zhao, Hideo Isshiki, Yoshinobu Aoyagi et al.. Formation and device application of Er-doped nanocrystalline Si using laser ablation[J]. Mater. Sci. Engng., 2000, B74: 197～201

[8] [8] Yan Changyu, Zhou Yang, Chu Lizhi et al.. Influence of ambient gas pressure on morphology of nc-Si film deposited by pulsed laser ablation in argon[J]. J. Hebei University, 2005, 25(1): 29～32

[9] [9] Jian Zi, H. Büscher, C. Falter et al.. Raman shift in Si nanocrystals[J]. Appl. Phys. Lett., 1996, 69(2): 200～202