Fig. 1. 7 MLs InAs/4 MLs GaSb superlattice miniband

Fig. 2. Band diagrams of barrier layer under different Al compositions. (a) Al_0.20Ga_0.80Sb; (b) Al_0.23Ga_0.77Sb; (c) Al_0.26Ga_0.74Sb

Fig. 3. Energy band diagrams of barrier layers with different structures. (a) nBn type; (b) pBp type

Fig. 4. Structures of mid-wave infrared detectors. (a) nBn type; (b) pBp type

Fig. 5. Dark current densities and tunneling current densities of nBn and pBp detectors under different barrier layer thicknesses. (a) nBn type; (b) pBp type

Fig. 6. Dark current densityies and tunneling current densities of nBn and pBp detectors under different barrier layer doping concentrations. (a) nBn type; (b) pBp type

Fig. 7. Band diagrams of nBn type detector with different barrier layer doping levels. (a) 7×10¹⁵ cm^-3; (b) 1×10¹⁶ cm^-3; (c) 3×10¹⁶ cm^-3

Fig. 8. Responsivities of nBn and pBp detectors under different absorber layer thicknesses. (a) nBn type; (b) pBp type

Fig. 9. J-V curves of nBn and pBp detectors at different temperatures. (a) nBn type; (b) pBp type

Fig. 10. J-V curves of nBn and pBp detectors at 160 K. (a) nBn type; (b) pBp type

Fig. 11. J-V curves of nBn and pBp detectors at 210 K. (a) nBn type; (b) pBp type

Fig. 12. J-V curves of nBn and pBp detectors at 260 K. (a) nBn type; (b) pBp type

Fig. 13. Quantum efficiencies of nBn and pBp detectors at 77 K. (a) nBn type; (b) pBp type

Fig. 14. Specific detectivities of nBn and pBp detectors at different temperatures. (a) nBn type; (b) pBp type