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Chinese Optics Letters, Volume. 19, Issue 4, 041406(2021)

Quantum wells micro-ring resonator laser emitting at 1746 nm for gas sensing

Fangyuan Meng1,2,3, Hongyan Yu1,2,3、*, Xuliang Zhou1,2,3、**, Yajie Li1,2,3, Mengqi Wang1,2,3, Wenyu Yang1,2,3, Weixi Chen4, Yejin Zhang2, and Jiaoqing Pan1,2,3
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • 4School of Physics, Peking University, Beijing 100871, China
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    References (19)
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    (a) Simulation result of the quality factor (Q). (b) Electric field distribution.

    Fig. 1. (a) Simulation result of the quality factor (Q). (b) Electric field distribution.

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    Optical gain of the QW structure varying with wavelength and carrier concentration Nn.

    Fig. 2. Optical gain of the QW structure varying with wavelength and carrier concentration Nn.

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    (a) Cross-sectional view SEM image of the etched ring. (b) Top-view SEM image of the device with a metal electrode, a micro-ring resonator, and an output waveguide.

    Fig. 3. (a) Cross-sectional view SEM image of the etched ring. (b) Top-view SEM image of the device with a metal electrode, a micro-ring resonator, and an output waveguide.

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    Output power and applied voltage versus the injection current for a micro-ring resonator laser.

    Fig. 4. Output power and applied voltage versus the injection current for a micro-ring resonator laser.

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    Lasing spectrogram for the micro-ring resonator laser at an injection current of 40 mA.

    Fig. 5. Lasing spectrogram for the micro-ring resonator laser at an injection current of 40 mA.

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    • Table 1. Epitaxial Structure of the Laser

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      Table 1. Epitaxial Structure of the Laser

      No.Item NameThickness (nm)Doping
      0N-InP (Substrate)/Si
      1N-InP (Buffer)750Si
      21.3 Q InGaAsP (Lower SCH)120/
      3Active area (MQWs)QW: 9.5×4 QB: 12×5/
      41.3 Q InGaAsP (Upper SCH)120/
      5P-InP (Cladding)1700Zn
      6P-InGaAs (Contact)200Zn
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    Fangyuan Meng, Hongyan Yu, Xuliang Zhou, Yajie Li, Mengqi Wang, Wenyu Yang, Weixi Chen, Yejin Zhang, Jiaoqing Pan, "Quantum wells micro-ring resonator laser emitting at 1746 nm for gas sensing," Chin. Opt. Lett. 19, 041406 (2021)

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    Paper Information

    Category: Lasers, Optical Amplifiers, and Laser Optics

    Received: Mar. 24, 2020

    Accepted: Oct. 19, 2020

    Posted: Oct. 21, 2020

    Published Online: Feb. 22, 2021

    The Author Email: Hongyan Yu (hyyu09@semi.ac.cn), Xuliang Zhou (zhouxl@semi.ac.cn)

    DOI:10.3788/COL202119.041406

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology