Fig. 1. Magnetization measurement results of Fe_0.26TaS₂: (a) Magnetization measurement with ZFC and FC process while H⊥ab, the measurement field is 100 Oe; (b) magnetization measurement with ZFC and FC process while H//ab, the measurement field is 100 Oe; (c) isothermal magnetization measurements for H⊥ab; (d) isothermal magnetization measurements for H//ab. For clarify, the data is shift equally in Fig. 1(d). Fe_0.26TaS₂单晶样品的磁性测量结果　(a) 外加磁场垂直于ab面(H⊥ab)时的FC和ZFC磁化曲线, 测量磁场为100 Oe (1 Oe = 10³/(4π) A/m); (b)外加磁场平行于ab面时 (H//ab)的FC和ZFC磁化曲线, 测量磁场为100 Oe; (c) H⊥ab的等温磁化曲线随外加磁场的变化; (d) H//ab的等温磁化曲线随外加磁场的变化(为清楚起见, 在垂直方向做了等间距平移)

Fig. 2. Isothermal magnetization and temperature dependence of resistance of Fe_0.26TaS₂: (a) Arrot plot for isothermal magnetization in H⊥ab; (b) temperature dependence of resistance. Fe_0.26TaS₂等温磁化曲线和电阻-温度曲线(1 emu = 10^–3 A·m²)　(a) H⊥ab方向Fe_0.26TaS₂等温磁化曲线的Arrott图, 居里温度为115 K; (b) Fe_0.26TaS₂的电阻-温度曲线

Fig. 3. Magnetic field dependence of magnetoresistance and Hall effect: (a) Magnetic field dependence of magnetoresistance, H⊥ab; (b) magnetic field dependence of magnetoresistance, H//ab; (c) magnetic field dependence of Hall effect, H⊥ab; (d) magnetic field dependence of Hall effect, H//ab. 磁电阻和霍尔电阻随外加磁场的变化　(a) H⊥ab时, 磁电阻随外加磁场的变化; (b) H//ab时, 磁电阻随外加磁场的变化; (c) H⊥ab时, 霍尔电阻随外加磁场的变化; (d) H//ab时, 霍尔电阻随外加磁场的变化

Fig. 4. Andreev reflection spectroscopy of Fe_0.26TaS₂/Pb: (a) Normalization of Andreev reflection spectroscopy from T = 2 K to 8 K; (b) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 1.6 K; (c) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 2 K; (d) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 4 K. The black dot is experimental data and red line is fitting. Fe_0.26TaS₂/Pb的Andreev反射谱　(a)不同温度下Andreev结的归一化微分电导谱; (b) T = 1.6 K, 修正的BTK理论对微分电导谱的拟合结果; (c) T = 2 K, 修正的BTK理论对微分电导谱的拟合结果; (d) T = 4 K, 修正的BTK理论对微分电导谱的拟合结果. 黑色点为实验数据, 红色线为理论计算结果

Fig. 5. Andreev reflection spectroscopy of Fe_0.26TaS₂/Al/Pb: (a) Normalization of Andreev reflection reflection spectroscopy from T = 0.36 K to 9 K; (b) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 0.36 K; (c) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 1 K; (d) modified BTK fitting for normalized Andreev reflection spectroscopy, T = 6 K. The black dot is experimental data and red line is fitting. Spin polarization is fixed to none-zero (P ≠ 0). Fe_0.26TaS₂/Al/Pb异质结的Andreev反射谱　(a)不同温度下的归一化微分电导谱; (b) T = 0.36 K, 修正的BTK理论对微分电导谱的拟合结果; (c) T = 1 K, 修正的BTK理论对微分电导谱的拟合结果; (d) T = 6 K, 修正的BTK理论对微分电导谱的拟合结果; 黑色点为实验数据, 红色线为理论计算结果, 自旋极化率P ≠ 0

Fig. 6. Modified BTK fitting for normalized Andreev reflection spectroscopy of Fe_0.26TaS₂/Al/Pb: (a) T = 0.36 K; (b) T = 1 K; (c) T = 3 K; (d) T = 6 K. The black dot is experimental data and the red line is fitting. Spin polarization is fixed to zero (P = 0). 修正的BTK理论对不同温度下微分电导谱的拟合结果　(a) T = 0.36 K; (b) T = 1 K; (c) T = 3 K; (d) T = 6 K; 黑色点为实验数据, 红色线为理论计算结果; 自旋极化率固定为零(P = 0)

Fig. 7. Andreev reflection spectroscopy of Fe_0.26TaS₂//NbSe₂: (a) Normalization of Andreev reflection spectroscopy from T = 1.7 K to 8 K; (b) modified BTK fitting for normalized Andreev reflection spectroscopy at T = 4 K; (c) modified BTK fitting for normalized Andreev reflection spectroscopy at T = 1.7 K; (d) modified BTK fitting respectively for negative bias or positive bias Andreev reflection spectroscopy at T = 1.7 K. The black dot is experimental data and red line is fitting. Fe_0.26TaS₂/NbSe₂的Andreev反射谱　(a)不同温度下的归一化微分电导谱和修正的BTK拟合; (b) T = 4 K的微分电导谱和修正的BTK拟合; (c) T = 1.7 K下, 负偏压的归一化微分电导谱及修正的BTK拟合; (d) T = 1.7 K下, 正偏压的归一化微分电导谱及修正的BTK拟合; 黑色点为实验数据, 红色线为理论计算结果