Journal of Advanced Dielectrics, Volume. 13, Issue 5, 2350017(2023)
Effect of grain size on ferroelectric and dielectric properties of thin films prepared by rf-magnetron sputtering
Shuai Ma1,2、*, Wei Li3, Jigong Hao3, Yuying Chen1, and Zhijun Xu4
Author Affiliations
1School of Medicine, Liaocheng University, Liaocheng 252059, P. R. China2Beijing Key Laboratory of Digital Stomatology, Beijing 100081, P. R. China3School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, P. R. China4School of Environment and Materials Engineering, Yantai University, Yantai 264005, P. R. Chinashow less
Ti3(BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4 C/cm2 was obtained for BLT thin films annealed at 700°C. The results show that the dielectric constant decreased with the increase in grain sizes.