Journal of Advanced Dielectrics, Volume. 13, Issue 5, 2350017(2023)

Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

Shuai Ma1,2、*, Wei Li3, Jigong Hao3, Yuying Chen1, and Zhijun Xu4
Author Affiliations
  • 1School of Medicine, Liaocheng University, Liaocheng 252059, P. R. China
  • 2Beijing Key Laboratory of Digital Stomatology, Beijing 100081, P. R. China
  • 3School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, P. R. China
  • 4School of Environment and Materials Engineering, Yantai University, Yantai 264005, P. R. China
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    Bi3.25La0.75Ti3O12(BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4 μC/cm2 was obtained for BLT thin films annealed at 700°C. The results show that the dielectric constant decreased with the increase in grain sizes.

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    Shuai Ma, Wei Li, Jigong Hao, Yuying Chen, Zhijun Xu. Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering[J]. Journal of Advanced Dielectrics, 2023, 13(5): 2350017

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    Paper Information

    Category: Research Articles

    Received: Jun. 25, 2023

    Accepted: Jul. 23, 2023

    Published Online: Nov. 21, 2023

    The Author Email: Shuai Ma (mashuai@lcu.edu.cn)

    DOI:10.1142/S2010135X23500170

    CSTR:32405.14.S2010135X23500170

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