Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass

Tongtong Li; Mingjie Zhang; Kangzhen Tian; Xiang Zhang; Xiao Yuan; Anping Yang; Zhiyong Yang

doi:10.3788/AOS201939.1016001

Acta Optica Sinica, Volume. 39, Issue 10, 1016001(2019)

Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass

Tongtong Li¹, Mingjie Zhang¹, Kangzhen Tian¹, Xiang Zhang^2,3, Xiao Yuan^2,3, Anping Yang¹, and Zhiyong Yang^1,2,3、*

¹Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China

²School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China

³Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou, Jiangsu 215006, China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(5)

Fig. 1. Experimental setup diagram of fs LDT test

Download full size

Fig. 2. Evolution of LDT of Ge-Sb-S glass. (a) Correlation between LDT of Ge_0.3Sb_0.1S_0.6 glass and repetition rate of irradiating pulse; (b) correlation between composition and LDT of Ge_xSb_0.1S_0.9-_x glass; (c) correlation between composition and LDT of Ge_0.15Sb_xS_0.85-_x glass

Download full size

Fig. 3. SEM images of damaged areas on Ge_0.3Sb_0.1S_0.6 glass irradiated by fs-pulses with different repetition rates

Download full size

Table 1. LDTs of Ge-Sb-S glasses irradiated by laser with central wavelength of 1030 nm, pulse width of 216 fs, and repetition rate of 1-1000 kHz

View table

Table 1. LDTs of Ge-Sb-S glasses irradiated by laser with central wavelength of 1030 nm, pulse width of 216 fs, and repetition rate of 1-1000 kHz

Composition	${d_{S}}_{}$ /%	LDT /(GW·cm^-2)
Composition	${d_{S}}_{}$ /%	1000 kHz	100 kHz	10 kHz	1 kHz
Ge_0.15Sb_0.1S_0.75	30	21.5	82.6	429.4	2222.0
Ge_0.2Sb_0.1S_0.7	15	22.1	88.3	418.6	2400.6
Ge_0.25Sb_0.1S_0.65	0	31.6	140.8	505.4	2630.5
Ge_0.285Sb_0.1S_0.615	-10.5	10.7	71.8	418.4	1982.3
Ge_0.3Sb_0.1S_0.6	-15	9.9	65.9	370.8	1974.0
Ge_0.325Sb_0.1S_0.575	-22.5	9.7	54.0	284.7	1854.8
Ge_0.15Sb_0.15S_0.7	17.5	21.8	86.6	432.9	2374.1
Ge_0.15Sb_0.2S_0.65	5	22.6	100.0	435.5	2480.9
Ge_0.15Sb_0.22S_0.63	0	24.2	103.5	447.3	2531.3
Ge_0.15Sb_0.25S_0.6	-7.5	11.4	72.2	424.5	2114.3
Ge_0.15Sb_0.28S_0.57	-15	9.8	57.4	290.8	1931.9

Table 2. Composition of damaged area on Ge_0.3Sb_0.1S_0.6 glass surface exposed to fs-pulses with different repetition rates

View table

Table 2. Composition of damaged area on Ge_0.3Sb_0.1S_0.6 glass surface exposed to fs-pulses with different repetition rates

Repetition rate /kHz	Position	Molar fraction /%
Repetition rate /kHz	Position	Ge	Sb	S	O
1	Damaged	30.2	10.1	55.4	4.3
1	Undamaged	30.2	10.3	59.5	0
10	Damaged	31.0	9.9	52.9	6.2
10	Undamaged	30.4	10.3	59.3	0
100	Damaged	31.6	8.9	51.8	7.7
100	Undamaged	30.2	10.2	59.4	0
1000	Damaged	32.1	8.1	48.7	11.1
1000	Undamaged	30.2	10.1	59.7	0

Tools

Get Citation

Copy Citation Text

Tongtong Li, Mingjie Zhang, Kangzhen Tian, Xiang Zhang, Xiao Yuan, Anping Yang, Zhiyong Yang. Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass[J]. Acta Optica Sinica, 2019, 39(10): 1016001

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Materials

Received: May. 10, 2019

Accepted: Jun. 3, 2019

Published Online: Oct. 9, 2019

The Author Email: Zhiyong Yang (yangzhiyong@jsnu.edu.cn)

DOI:10.3788/AOS201939.1016001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. LDTs of Ge-Sb-S glasses irradiated by laser with central wavelength of 1030 nm, pulse width of 216 fs, and repetition rate of 1-1000 kHz

Table 1. LDTs of Ge-Sb-S glasses irradiated by laser with central wavelength of 1030 nm, pulse width of 216 fs, and repetition rate of 1-1000 kHz

Table 2. Composition of damaged area on Ge0.3Sb0.1S0.6 glass surface exposed to fs-pulses with different repetition rates

Table 2. Composition of damaged area on Ge0.3Sb0.1S0.6 glass surface exposed to fs-pulses with different repetition rates

Table 2. Composition of damaged area on Ge_0.3Sb_0.1S_0.6 glass surface exposed to fs-pulses with different repetition rates

Table 2. Composition of damaged area on Ge_0.3Sb_0.1S_0.6 glass surface exposed to fs-pulses with different repetition rates