Chinese Journal of Lasers, Volume. 22, Issue 10, 757(1995)
Simultaneous Measurement of Profiles of the Stable-state Photoconductive Response and Minority Carrier Lifetime Using Two Semicondutor Lasers
This paper presents an infrared optical system.Two infrared optical beams, oneof which is from a tunable Pb1-xSnxTe diode laser,and the other from a pulsed GaAs/GaAlAs diode laser,were focused at the same spot of a sample.The dimension of theinfrared spot was measured to be about 250 μm in diameter.The profiles of the stable-antephotoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTe were studied.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simultaneous Measurement of Profiles of the Stable-state Photoconductive Response and Minority Carrier Lifetime Using Two Semicondutor Lasers[J]. Chinese Journal of Lasers, 1995, 22(10): 757
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