Journal of Semiconductors, Volume. 40, Issue 5, 052801(2019)
Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
Figures & Tables(6)
Fig. 1. (Color online) Schematic epitaxial structures of two samples with different position of V-pits covering layer.
Fig. 2. (Color online) The temperature-dependent EQE as a function of currents at (a) 300 K, (b) 200 K, (c) 150 K, (d) 100 K, respectively.
Fig. 3. (Color online) The STEM image of two samples with V-pits structure.
Fig. 4. (Color online) Current–voltage curves in linear scale of two samples at (a) 300 K, (b) 200 K, (c) 150 K, (d) 100 K, respectively.
Fig. 5. (Color online) The EL spectra of two experimental samples at various injection currents at 100 K.
Fig. 6. (Color online) Schematic diagram of the potential transport paths of holes in two samples with different position of VCL.
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Chen Xu, Changda Zheng, Xiaoming Wu, Shuan Pan, Xingan Jiang, Junlin Liu, Fengyi Jiang. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs[J]. Journal of Semiconductors, 2019, 40(5): 052801
Paper Information
Category: Articles
Received: Dec. 11, 2018
Accepted: --
Published Online: Sep. 18, 2021
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