[2] [2] SKORDARIS G, BOUZAKIS K D, KOTSANIS T, et al. Effect of the crystallinity of diamond coatings on cemented carbide inserts on their cutting performance in milling［J］. CIRP Annals-Manufacturing Technology, 2019, 68(1): 65-68.

[7] [7] LU P, GOMEZ H, XIAO X C, et al. Coating thickness and interlayer effects on CVD-diamond film adhesion to cobalt-cemented tungsten carbides［J］. Surface and Coatings Technology, 2013, 215: 272-279.

[8] [8] FHANER M, ZHAO H, BIAN X C, et al. Improvements in the formation of boron-doped diamond coatings on platinum wires using the novel nucleation process (NNP)［J］. Diamond and Related Materials, 2011, 20(2): 75-83.

[9] [9] ISSAOUI R, ACHARD J, TALLAIRE A, et al. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices［J］. Applied Physics Letters, 2012, 100(12): 122109-1.

[10] [10] GROTJOHN T A, TRAN D T, YARAN M K, et al. Heavy phosphorus doping by epitaxial growth on the (111) diamond surface［J］. Diamond and Related Materials, 2014, 44: 129-133.

[12] [12] SATO K, KATSURA T. Sulfur: a new solvent-catalyst for diamond synthesis under high-pressure and high-temperature conditions［J］. Journal of Crystal Growth, 2001, 223(1/2): 189-194.

[13] [13] CHEN N, MA H A, CHEN L X, et al. Effects of S on the synthesis of type Ib diamond under high pressure and high temperature［J］. International Journal of Refractory Metals and Hard Materials, 2018, 71: 141-146.

[14] [14] HAUBNER R, ULLRAM S. Influence of H2S addition during diamond deposition on hardmetal substrates［J］. Diamond and Related Materials, 2008, 17(7/8/9/10): 1100-1105.

[15] [15] NOSE K, SUWA T, FUJITA R, et al. Crystallinity and electrical conductivity of sulfur-containing microcrystalline diamond thin film［J］. Thin Solid Films, 2012, 520(13): 4310-4313.

[16] [16] NISHITANI-GAMO M, YASU E J, XIAO C Y, et al. Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties［J］. Diamond and Related Materials, 2000, 9(3/4/5/6): 941-947.

[17] [17] LV S J, HONG S, YUAN C, et al. Selenium and tellurium: elemental catalysts for conversion of graphite to diamond under high pressure and temperature［J］. Applied Physics Letters, 2009, 95: 242105.

[18] [18] ULLAH M, AHMED E, HUSSAIN F, et al. Electrical conductivity enhancement by boron-doping in diamond using first principle calculations［J］. Applied Surface Science, 2015, 334: 40-44.

[22] [22] CHEN B S, LI Y Z, GUAN X Y, et al. First-principles study of structural, elastic and electronic properties of ZrIr alloy［J］. Computational Materials Science, 2015, 105: 66-70.

[25] [25] SUN B, ZHANG X, LIN Z. Growth mechanism and the order of appearance of diamond (111) and (100) facets［J］. Physical Review B, Condensed Matter, 1993, 47(15): 9816-9824.

[26] [26] PAN J W, LI C, ZHAO Y F, et al. Electronic properties of TiO2 doped with Sc, Y, La, Zr, Hf, V, Nb and Ta［J］. Chemical Physics Letters, 2015, 628: 43-48.