Absorption and emission modulation in a MoS<sub>2</sub>–GaN (0001) heterostructure by interface phonon–exciton coupling

Yuba Poudel; Jagoda Sławińska; Priya Gopal; Sairaman Seetharaman; Zachariah Hennighausen; Swastik Kar; Francis D’souza; Marco Buongiorno Nardelli; Arup Neogi

doi:10.1364/PRJ.7.001511

Photonics Research, Volume. 7, Issue 12, 1511(2019)

Absorption and emission modulation in a MoS₂–GaN (0001) heterostructure by interface phonon–exciton coupling

Yuba Poudel¹, Jagoda Sławińska¹, Priya Gopal¹, Sairaman Seetharaman², Zachariah Hennighausen³, Swastik Kar³, Francis D’souza², Marco Buongiorno Nardelli¹, and Arup Neogi^1、*

Author Affiliations

¹Department of Physics, University of North Texas, Denton, Texas 76203, USA

²Department of Chemistry, University of North Texas, Denton, Texas 76203, USA

³Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA

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References(54)

[1] A. Khan, K. Balakrishnan, T. Katona. Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics, 2, 77-84(2008).

[2] J. Joh, J. A. del Alamo. A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. 2009 Reliability of Compound Semiconductors Digest(2009).

[3] N. R. Glavin, K. D. Chabak, E. R. Heller, E. A. Moore, T. A. Prusnick, B. Maruyama, D. E. Walker, D. L. Dorsey, Q. Paduano, M. Snure. Flexible gallium nitride for high-performance, strainable radio-frequency devices. Adv. Mater., 29, 1701838(2017).

[4] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature, 406, 865-868(2000).

[5] W. Sun, C.-K. Tan, J. J. Wierer, N. Tansu. Ultra-broadband optical gain in III-nitride digital alloys. Sci. Rep., 8, 3109(2018).

[6] Q. Lv, J. Liu, C. Mo, J. Zhang, X. Wu, Q. Wu, F. Jiang. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport. ACS Photon., 6, 130-138(2019).

[7] P. Gupta, A. A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov, S. Vishwanath, V. Protasenko, M. R. Laskar, H. G. Xing, D. Jena, A. Bhattacharya. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Sci. Rep., 6, 23708(2016).

[8] A. Carvalho, R. M. Ribeiro, A. H. Castro Neto. Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides. Phys. Rev. B, 88, 115205(2013).

[9] M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, J. Kim. Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films. ACS Appl. Mater. Interfaces, 8, 28809-28815(2016).

[10] Z. Zhang, Q. Qian, B. Li, K. J. Chen. Interface engineering of monolayer MoS₂/GaN hybrid heterostructure: modified band alignment for photocatalytic water splitting application by nitridation treatment. ACS Appl. Mater. Interfaces, 10, 17419-17426(2018).

[11] H. Henck, Z. B. Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti. Interface dipole and band bending in the hybrid p-n heterojunction MoS₂/GaN (00001). Phys. Rev. B, 96, 115312(2017).

[12] M. Tangi, P. Mishra, T. K. Ng, B. Janjua, M. S. Alias, B. S. Ooi, M. N. Hedhili, D. H. Anjum, C.-C. Tseng, Y. Shi, L.-J. Li, H. J. Joyce. Determination of band offsets at GaN/single-layer MoS₂ heterojunction. Appl. Phys. Lett., 109, 032104(2016).

[13] B. Wen, Y. Zhu, D. Yudistira, A. Boes, L. Zhang, T. Yidirim, B. Liu, H. Yan, X. Sun, Y. Zhou, Y. Xue, Y. Zhang, L. Fu, A. Mitchell, H. Zhang, Y. Lu. Ferroelectric-driven exciton and trion modulation in monolayer molybdenum and tungsten diselenides. ACS Nano, 13, 5335-5343(2019).

[14] R. Cao, H.-D. Wang, Z.-N. Guo, D. K. Sang, L.-Y. Zhang, Q.-L. Xiao, Y.-P. Zhang, D.-Y. Fan, J.-Q. Li, H. Zhang. Black phosphorous/indium selenide photoconductive detector for visible and near-infrared light with high sensitivity. Adv. Opt. Mater., 7, 1900020(2019).

[15] J. Wang, H. Shu, P. Liang, N. Wang, D. Cao, X. Chen. Thickness-dependent phase stability and electronic properties of GaN nanosheets and MoS₂/GaN van der Waals heterostructures. J. Phys. Chem. C, 123, 3861-3867(2019).

[16] Y. Liu, S. Zhang, J. He, Z. M. Wang, Z. Liu. Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials. Nano-Micro Lett., 11, 13(2019).

[17] D. Ruzmetov, M. R. Neupane, T. P. O’Regan, A. Mazzoni, M. L. Chin, R. A. Burke, F. J. Crowne, A. G. Birdwell, T. G. Ivanov, A. Herzing, A. V. Davydov, R. A. Burke, D. E. Taylor, A. Kolmakov, K. Zhang, J. A. Robinson. Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS₂ and GaN. 2D Mater., 5, 045016(2018).

[18] T. Kümmell, U. Hutten, F. Heyer, K. Derr, R.-M. Neubieser, W. Quitsch, G. Bacher. Carrier transfer across a 2D-3D semiconductor heterointerface: the role of momentum mismatch. Phys. Rev. B, 95, 081304(2017).

[19] Y. Poudel, M. Moazzezi, Y. Rostovtsev, A. Neogi, G. N. Lim, F. D’souza, Z. Hennighausen, S. Kar. Active control of coherent dynamics in hybrid plasmonic MoS₂ monolayers with dressed phonons. ACS Photon., 6, 1645-1655(2019).

[20] M. Mahat, Y. Rostovtsev, S. Karna, G. N. Lim, F. D’souza, A. Neogi. Plasmonically induced transparency in graphene oxide quantum dots with dressed phonon states. ACS Photon., 5, 614-620(2018).

[21] C. K. Choi, Y. H. Kwon, J. S. Krasinski, G. H. Park, G. Setlur, J. J. Song, Y. C. Chang. Ultrafast carrier dynamics in a highly excited GaN epilayer. Phys. Rev. B, 63, 115315(2001).

[22] Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye, L. Dai. Epitaxial single-layer MoS₂ on GaN with enhanced valley helicity. Adv. Mater., 30, 1703888(2018).

[23] L. Ni, U. Huynh, A. Cheminal, T. H. Thomas, R. Shivanna, T. F. Hinrichsen, A. Sadhanala, A. Rao, S. Ahmad. Real-time observation of exciton-phonon coupling dynamics in self-assembled hybrid perovskite quantum wells. ACS Nano, 11, 10834-10843(2017).

[24] P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Condens. Matter, 21, 395502(2009).

[25] P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, R. Gebauer, U. Gerstmann, F. Giustino, T. Gorni, J. Jia, M. Kawamura, H.-Y. Ko, A. Kokalj, E. Küçükbenli, M. Lazzeri, M. Marsili, N. Marzari, F. Mauri, N. L. Nguyen, H.-V. Nguyen, A. Otero-de-la-Roza, L. Paulatto, S. Poncé, D. Rocca, R. Sabatini, B. Santra, M. Schlipf, A. P. Seitsonen, A. Smogunov, I. Timrov, T. Thonhauser, P. Umari, N. Vast, X. Wu, S. Baroni. Advanced capabilities for materials modelling with Quantum ESPRESSO. J. Phys. Condens. Matter, 29, 465901(2017).

[26] L. A. Agapito, S. Curtarolo, M. Buongiorno Nardelli. Reformulation of DFT+U as a pseudohybrid Hubbard density functional for accelerated materials discovery. Phys. Rev. X, 5, 011006(2015).

[27] G. Kresse, D. Joubert. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B, 59, 1758-1775(1999).

[28] A. D. Corso. Pseudopotentials periodic table: from H to Pu. Comput. Mater. Sci., 95, 337-350(2014).

[29] S. Grimme. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem., 27, 1787-1799(2006).

[30] J. I. Cerdá, M. A. Van Hove, P. Sautet, M. Salmeron. Efficient method for the simulation of STM images. I. Generalized Green-function formalism. Phys. Rev. B, 56, 15885-15899(1997).

[31] E. T. R. Rossen, C. F. J. Flipse, J. I. Cerdá. Lowest order in inelastic tunneling approximation: efficient scheme for simulation of inelastic electron tunneling data. Phys. Rev. B, 87, 235412(2013).

[32] J. Sławińska, A. Narayan, S. Picozzi. Hidden spin polarization in nonmagnetic centrosymmetric BaNiS₂ crystal: signatures from first principles. Phys. Rev. B, 94, 241114(2016).

[33] J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, D. Sánchez-Portal. The SIESTA method for ab initio order-N materials simulation. J. Phys. Condens. Matter, 14, 2745-2779(2002).

[34] M. Buongiorno Nardelli, F. T. Cerasoli, M. Costa, S. Curtarolo, R. De Gennaro, M. Fornari, L. Liyanage, A. R. Supka, H. Wang. PAOFLOW: a utility to construct and operate on ab initio Hamiltonians from the projections of electronic wavefunctions on atomic orbital bases, including characterization of topological materials. Comput. Mater. Sci., 143, 462-472(2018).

[35] I. Bilgin, F. Liu, A. Vargas, A. Winchester, M. K. Man, M. Upmanyu, K. M. Dani, G. Gupta, S. Talapatra, A. D. Mohite, S. Kar. Chemical vapor deposition synthesized atomically thin molybdenum disulfide with optoelectronic-grade crystalline quality. ACS Nano, 9, 8822-8832(2015).

[36] H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, C. Thomsen. Zone-boundary phonons in hexagonal and cubic GaN. Phys. Rev. B, 55, 7000-7004(1997).

[37] V. Yu. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, R. A. Evarestov. Phonon dispersion and Raman scattering in hexagonal GaN and AlN. Phys. Rev. B, 58, 12899-12907(1998).

[38] K. Gołasa, M. Grzeszczyk, R. Bożek, P. Leszczyński, A. Wysmołek, M. Potemski, A. Babiński. Resonant Raman scattering in MoS₂—from bulk to monolayer. Solid State Commun., 197, 53-56(2014).

[39] H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, D. Baillargeat. From bulk to monolayer MoS₂: evolution of Raman scattering. Adv. Funct. Mater., 22, 1385-1390(2012).

[40] S. Parida, A. Patsha, S. Bera, S. Dhara. Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires. J. Phys. D, 50, 275103(2017).

[41] J. M. Chen, C. S. Wang. Second order Raman spectrum of MoS₂. Solid State Commun., 14, 857-860(1974).

[42] F. M. Pesci, M. S. Sokolikova, C. Grotta, P. C. Sherrell, F. Reale, K. Sharda, N. Ni, P. Palczynski, C. Mattevi. MoS₂/WS₂ heterojunction for photoelectrochemical water oxidation. ACS Catal., 7, 4990-4998(2017).

[43] L. Wang, Z. Wang, H. Y. Wang, G. Grinblat, Y. L. Huang, D. Wang, X. H. Ye, X. B. Li, Q. Bao, A. S. Wee, S. A. Maier. Slow cooling and efficient extraction of C-exciton hot carriers in MoS₂ monolayer. Nat. Commun., 8, 13906(2017).

[44] R. Gillen, J. Maultzsch. Light-matter interactions in two-dimensional transition metal dichalcogenides: dominant excitonic transitions in mono- and few-layer MoX₂ and band nesting. IEEE J. Sel. Top. Quantum Electron., 23, 219-230(2017).

[45] D. Y. Qiu, F. H. da Jornada, S. G. Louie. Optical spectrum of MoS₂: many-body effects and diversity of exciton states. Phys. Rev. Lett., 111, 216805(2013).

[46] E. A. A. Pogna, M. Marsili, D. De Fazio, S. Dal Conte, C. Manzoni, D. Sangalli, D. Yoon, A. Lombardo, A. C. Ferrari, A. Marini, G. Cerullo. Photo-induced bandgap renormalization governs the ultrafast response of single-layer MoS₂. ACS Nano, 10, 1182-1188(2016).

[47] S. Gökden. The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas. Physica E, 23, 198-203(2004).

[48] F. Ceballos, Q. Cui, M. Z. Bellus, H. Zhao. Exciton formation in monolayer transition metal dichalcogenides. Nanoscale, 8, 11681-11688(2016).

[49] F. Chen, T. Wang, L. Wang, X. Ji, Q. Zhang. Improved light emission of MoS₂ monolayers by constructing AlN/MoS₂ core-shell nanowires. J. Mater. Chem. C, 5, 10225-10230(2017).

[50] Z. Li, R. Ye, R. Feng, Y. Kang, X. Zhu, J. M. Tour, Z. Fang. Graphene quantum dots doping of MoS₂ monolayers. Adv. Mater., 27, 5235-5240(2015).

[51] Y. Li, Z. Li, C. Chi, H. Shan, L. Zheng, Z. Fang. Plasmonics of 2D nanomaterials: properties and applications. Adv. Sci., 4, 1600430(2017).

[52] S. Sim, J. Park, J. G. Song, C. In, Y. S. Lee, H. Kim, H. Choi. Exciton dynamics in atomically thin MoS₂: inter-excitonic interaction and broadening kinetics. Phys. Rev. B, 88, 075434(2013).

[53] M. Lange, J. Zippel, G. Benndorf, C. Czekalla, H. Hochmuth, M. Lorenz, M. Grundmann. Temperature dependence of localization effects of excitons in ZnO/Cd_xZn_1-xO/ZnO double heterostructures. J. Vac. Sci. Technol. B, 27, 1741-1745(2009).

[54] M. S. Kim, S. Roy, J. Lee, B. G. Kim, H. Kim, J. H. Park, S. J. Yun, G. H. Han, J. Y. Leem, J. Kim. Enhanced light emission from monolayer semiconductors by forming heterostructures with ZnO thin films. ACS Appl. Mater. Interfaces, 8, 28809-28815(2016).

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Yuba Poudel, Jagoda Sławińska, Priya Gopal, Sairaman Seetharaman, Zachariah Hennighausen, Swastik Kar, Francis D’souza, Marco Buongiorno Nardelli, Arup Neogi, "Absorption and emission modulation in a MoS₂–GaN (0001) heterostructure by interface phonon–exciton coupling," Photonics Res. 7, 1511 (2019)

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Paper Information

Category: Optical and Photonic Materials

Received: Sep. 26, 2019

Accepted: Oct. 30, 2019

Published Online: Nov. 28, 2019

The Author Email: Arup Neogi (arup@unt.edu)

DOI:10.1364/PRJ.7.001511

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology